Method for growing AlN and AlGaN on InAlN buffer layer

Abstract

The invention discloses a method used for growing AlN and AlGaN on an InAlN buffer layer, which grows high-quality AlN and AlGaN on a substrate by using a metal organic chemical gas deposition external extension growth system. The method of the invention comprises the process steps as follows: (1) the InAlN buffer layer is directly grown on the substrate or the InAlN buffer layer grows after the AlN or AlGaN nucleation layer grows; (2) high-quality AlN or AlGaN crystallizing layer grows on the InAlN buffer layer; (3) multi-layer growth of the device structure is carried out. When the method of the invention is used for growing AlN or AlGaN crystal, the staggering density of the material is reduced, the interface smoothness is improved, the quality of the material is improved; meanwhile, the growth window is increased, the growth of the material is easier; furthermore, the performance of sunblind-typed ultraviolet detector is improved further; the weapon equipment level of national detector is greatly improved; furthermore, the detector is the main part of civil fire monitoring systems.

Description

technical field [0001] The invention relates to a method for growing AlN and AlGaN on an InAlN buffer layer, and belongs to the field of nitride-based material growth and device fabrication. Background technique [0002] Due to the wide bandgap, low dielectric constant, high temperature resistance, corrosion resistance, and radiation resistance of nitride materials, they are very suitable for making radiation-resistant, high-frequency, high-power, and high-density integrated electronic devices. In terms of optoelectronic devices, nitride materials also have excellent performance. First of all, GaN does not absorb visible light, and the ultraviolet detector made of it can be blinded to visible light, does not require a filter system, and does not need to be made into a shallow junction, which can greatly improve Quantum efficiency, now GaN-based ultraviolet detectors have begun to commercialize; secondly, AlGaN with a high Al composition greater than 50% can achieve solar bli...

AI Technical Summary

Problems solved by technology

According to literature reports, the general method to solve the above-mentioned AlN and AlGaN heteroepitaxy problems is to adjust the molar ratio, growth temperature, gas flow rate, flow rate, etc. of group V elements and group III elements. The growth window of the material becomes extremely narrow, the growth conditions are difficult to grasp, and the growth repeatability is very poor

Among them, only raising the growth temperature to about 1400 ℃ ~ 1500 ℃ can improve the quality of AlN crystal has been recognized in the world, but now there are few commercial epitaxy furnaces in the world that can reach such a high temperature.

Images