Method for forming graphic pattern

Abstract

The invention provides a forming method of a pattern, comprising the steps as follows: firstly, a material layer is provided; a patterned hard mask layer is formed on the material layer; subsequently, a clearance wall is respectively formed on the side wall of the patterned hard mask layer; subsequently, the patterned hard mask layer is removed and an opening is formed between the two adjacent clearance walls; subsequently, the clearance wall is used as the mask so as to remove a part of material layer, thus forming a patterned material layer.

Description

technical field [0001] The present invention relates to a method for forming a pattern, and more particularly, to a method for forming a pattern having the same line width and line spacing. Background technique [0002] As the integration level of integrated circuits becomes higher and higher, the design of the size of the entire semiconductor element is also forced to move forward in the direction of continuous reduction in size. In other words, if the packing density of components and the integration degree of integrated circuits are to be increased, the pattern pitch, that is, the sum of the line width and the line pitch of the pattern, must also be reduced accordingly. Generally speaking, in the manufacturing process of integrated circuits, the pattern pitch is mostly reduced by a high-resolution lithography process, that is to say, the line width and line spacing are determined by the photoresist layer after exposure and development. [0003] One of the ways to increas...

AI Technical Summary

Problems solved by technology

However, even in combination with other resolution-enhancing technologies, for the 248nm lithography process, it is still impossible to form a line width below 100nm

Furthermore, improving the equipment and materials used in the current lithography system to meet the needs of the lithography process will also increase the cost of the process

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