Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for removing abnormal point of detection data

A technology for detecting data and abnormal points, which is applied in the field of removing abnormal points in detection data, can solve problems such as inaccurate removal of abnormal points, and achieve the effects of preventing misjudgment, improving effectiveness, and convenient operation

Inactive Publication Date: 2008-12-24
SEMICON MFG INT (SHANGHAI) CORP
View PDF1 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The invention provides a method for removing abnormal points in detection data, so as to improve the problem of inaccurate removal of abnormal points in the existing detection data analysis process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for removing abnormal point of detection data
  • Method for removing abnormal point of detection data
  • Method for removing abnormal point of detection data

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0050] The processing method of the present invention is widely used, below is to illustrate by specific embodiment, certainly the present invention is not limited to following specific embodiment, the general replacement well-known to those of ordinary skill in the art is undoubtedly encompassed in this within the scope of protection of the invention.

[0051] In the detection data, the existence of abnormal points will seriously affect the mathematical model derived from the detection data. Therefore, in practical applications, it is often necessary to remove the abnormal points in the detection data. There are many reasons for abnormal points, most of which are caused by human errors, such as data registration errors, data measurem...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for removing abnormal points in detected data, which comprises the following steps of: the provision of at least five detected data; the setting of confidence and estimated quantity of abnormal points; the calculation of a deviation value according to the estimated quantity of abnormal points; the determination of a critical value according to quantity of detected data, the confidence and the estimated quantity of abnormal points; the comparison between the deviation value and the critical value; the determination of actual quantity of abnormal points according to the comparison result and the removing of abnormal point data in the detected data according to the actual quantity of abnormal points. The application of the method for removing abnormal points of the invention to the removing of abnormal points in the detected data can improve the accuracy of the removing of abnormal points and acquire more accurate result of data fitting, thus improving the effectiveness of technical monitoring of semiconductors.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing abnormal points in detection data. Background technique [0002] The integrated circuit manufacturing process is a planar manufacturing process, which combines photolithography, etching, deposition, ion implantation and other processes to form a large number of various types of complex devices on the same substrate and connect them to each other to have a complete electronic functions. Among them, a problem in any step of the process may lead to the failure of the production of the circuit. Therefore, in the prior art, the production results of each step of the process are often detected, such as the growth thickness of the film, the depth of etching, photolithography, etc. Overlay accuracy, device life, etc. are tested, and the data obtained from the detection are analyzed to judge whether the performance of each step of the process and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/66H01L21/00
Inventor 杨斯元龚斌简维廷
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com