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SnO2 thin film of vehicle mounted ethanol detection and preparation method thereof

A thin film and ethanol technology, applied in the field of SnO2 thin film for vehicle-mounted ethanol detection and its preparation, can solve the problems of small particle size of tin oxide, unfavorable large-scale production, unfavorable preparation method, etc., and achieves easy operation, good surface morphology, process simple effect

Inactive Publication Date: 2008-12-24
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
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Problems solved by technology

The sensitive film prepared by this method has the characteristics of small tin oxide particle size, large specific surface area, and uniform thickness. The prepared SnO 2 Sensitive films have a certain sensitive response to gases, but this preparation method is not conducive to film doping, the equipment must be operated by professionals, the production cycle is long, and the cost is expensive, which is not conducive to large-scale production

Method used

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  • SnO2 thin film of vehicle mounted ethanol detection and preparation method thereof
  • SnO2 thin film of vehicle mounted ethanol detection and preparation method thereof
  • SnO2 thin film of vehicle mounted ethanol detection and preparation method thereof

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preparation example Construction

[0038] On-board ethanol detection of SnO 2 The preparation method of the thin film includes electrode preparation, electrode pretreatment, thin film preparation, doping and annealing in implementation, wherein:

[0039] Electrode preparation: the comb-shaped electrode layer 2 is prepared on the silicon substrate 1 by micromachining, photolithography and other technologies;

[0040] Electrode pretreatment: firstly, lead the electrodes, and weld gold wires with gold paste at both ends of the electrodes. Then a layer of 10-20nm carbon film is vaporized on the surface by sputtering to enhance the conductivity of the electrode;

[0041] Thin film preparation: using LK2005 electrochemical workstation, using constant current technology to control the current electrolytic coulometric method for electrodeposition. Electrodeposition conditions: I=0.00016At=7200sCSnCl2=0.02mol / l, CHNO3=0.03mol / l, CKNO3=0.1mol / l, CDNA=0.1mg / l, dry in air;

[0042] Doping and annealing: Sputtering on Sn...

Embodiment 1

[0044] Wash the pretreated comb-shaped electrode layer 2 with ethanol and deionized water respectively, then put the electrode into the electrolytic cell for electrodeposition, the concentration of the electrolyte: CSnCl2=0.02mol / l CHNO3=0.03mol / l CKNO3=0.1mol / l CDNA=0.1mg / l, electrodeposition current: I=0.00008A, electrodeposition time: t=7200s, that is, a layer of SnO is deposited on the electrode surface 2 Thin film sensitive material layer 3. Take out the electrode, dry it in the air, then vaporize a 2nm thick gold layer on the surface of the film by sputtering technology, and finally anneal at 400°C for 2h in high-purity argon to prepare SnO under I=0.00008A current. 2 film.

Embodiment 2

[0046] The pretreated comb-shaped electrode layer 2 is used respectively with ethanol and deionized water to clean the electrode surface, then put the electrode into the electrolytic cell for electrodeposition, the concentration of the electrolyte: CSnCl2=

[0047] 0.02mol / l CHNO3=0.03mol / l CKNO3=0.1mol / l CDNA=0.1mg / l, electrodeposition current: I=0.00016A. Electrodeposition time: t=7200s, that is, a layer of SnO is deposited on the electrode surface 2 Thin film sensitive material layer 3, take out the electrode, dry in the air, then evaporate a 2nm thick gold layer on the surface of the film by sputtering technology, and finally anneal at 400°C for 2h in high-purity argon to prepare SnO under current 2 film.

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Abstract

The invention discloses an SnO2 film and a preparation method used for vehicle-bone ethanol detection; the SnO2 film used for the vehicle-bone ethanol detection mainly comprises three layers: a silicon underlay, an electrode layer and a film sensitive material layer; wherein, the sensitive material layer mainly consists of an SnO2 semiconductor oxide material film; the electrode layer is a comb-shaped electrode; the preparation method of the invention comprises the steps as follows: electric deposition and a DNA regulation nanometer film preparation process are used for generating the nanometer-class oxide film of stannum; subsequently, gold doping and annealing are carried out so as to prepare the nanometer crystal grain jewellers putty film. The jewellers putty film prepared by the invention has the advantages of small granularity, large specific surface area, uniform surface, and high sensitiveness and quick response recovery, etc. to the detection of the easily volatile gas ethanol in the automobile. The preparation method of the invention has the advantages of uniform and orderly deposition on substrates with various complex structures, precisely controlling the thickness, the chemical composition and the structure, etc. of the deposition layer, little fabrication equipment investment, simple process, and easy operation.

Description

[0001] Field [0002] The invention relates to the field of preparation of sensitive materials for gas sensors, in particular to SnO for vehicle-mounted ethanol detection 2 Thin films and methods for their preparation. Background technique [0003] Gas sensor is a kind of sensor widely used in my country's sensor system, and has been widely used in environmental protection, medical, automotive, metallurgy, chemical and other fields. In recent years, gas sensors have been used more and more widely, the most important of which are to prevent accidents, improve the quality of the living environment, ensure the consistency of production process conditions, and protect the environment. In the prevention of emergencies, there is a great demand for alarm devices, which are designed to give timely alarms for poisoning, coma or fire caused by harmful or flammable gas leakage; in order to improve living conditions, it is necessary to apply sensors to Detect air pollution in rooms, off...

Claims

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Application Information

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IPC IPC(8): G01N33/98G01N27/12
Inventor 李民强黄家锐王俊海刘锦淮
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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