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Method for preparing copper indium selenium compound thin film by continuous ion sheath adsorption reaction method

An adsorption reaction, continuous ion technology, applied in chemical instruments and methods, sustainable manufacturing/processing, climate sustainability, etc., can solve problems such as inability to achieve coating, research and application limitations, and achieve good morphology and expanded use. range effect

Inactive Publication Date: 2008-11-26
TIANJIN UNIV
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Problems solved by technology

Shi Yong and others have reported the preparation of CuInS by SILAR method using mixed cation solution in Applied surface science 2006, 252: 3737-3743 and Thin solid films (solid film) 2007, 515: 3339-3343 respectively. 2 and CuInSe 2 thin film, but the precursor solution prepared by it has strong acid or strong alkaline characteristics, and it cannot be coated on the surface of some semiconductor electrodes with low chemical stability, such as the application of ZnO electrode, which makes trans (superstrate type) deposition The research and application of thin-film photovoltaic cells, such as extremely thin adsorption layer (ETA) cells, have been significantly limited.

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  • Method for preparing copper indium selenium compound thin film by continuous ion sheath adsorption reaction method
  • Method for preparing copper indium selenium compound thin film by continuous ion sheath adsorption reaction method
  • Method for preparing copper indium selenium compound thin film by continuous ion sheath adsorption reaction method

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Embodiment Construction

[0024] The embodiment of the present invention uses chemically pure raw materials, the precursor solution is 100ml, the cycle is 100 times, and the heat treatment is at 400°C for 1h under the protection of Ar atmosphere. The substrate is ZnO, indium tin oxide (ITO glass), SnO 2 、TiO 2 , ordinary glass or silicon wafer. See Table 1 for details.

[0025] Table 1

[0026]

[0027] The materials obtained in the above examples all appear CuInSe 2Phase, by x-ray diffraction (D / MAX-2500x-ray diffractometer) test shows, 1#, 3#, 4# and 6# gained films do not have other miscellaneous phases, by x-ray photoelectron spectrum (Esca MultiplexPhilips-1600x-ray photoelectron spectrum Instrument) test shows, 1#, 4# and 6# film component molar ratio is close to Cu:In:Se=1:1:2. Draw by ultraviolet-visible spectrum analysis (Beckman Du-8B ultraviolet-visible absorption spectrometer), except that the light absorption coefficient of 2# sample is all greater than 10 5 , and the corresponding...

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Abstract

The invention discloses a process for preparing copper indium selenide compound films by a successive ionic layer adsorption and reaction method. The steps comprise (1) preparing Cu-In mixed cationic precursor solution, (2) preparing anionic precursor solution, (3) processing coating by using the successive ionic layer adsorption and reaction method, and (4) heat treating. The process for preparing copper indium selenide compound films firstly employs two different complexing agents, such as trolamine (TEA) and citric acid (C6H8O7), to respectively complex CuCl2 and InCl3, thereby obtaining near-neutral mixed cationic precursor solution with pH=8-8.5, enlarging the using range of a substrate when settling CuInSe2 by employing the SILAR method, and preparing a CIS photovoltaic film which meets stoichiometric proportion and has fine appearance. The copper indium selenide compound films of the invention can be applied to film photovoltaic cell and light absorption layers of other solar cells with novel structure.

Description

technical field [0001] The invention relates to a method for preparing a photoelectric semiconductor thin film, in particular to a method for preparing a copper indium selenide compound thin film by adopting a continuous ion layer adsorption reaction method (SILAR). Background technique [0002] The energy crisis and environmental pollution have promoted the research of solar cells, and semiconductor thin film materials based on photoelectric conversion have also become the focus of many scientific researches. In recent years, copper indium selenide (CuInSe 2 ), copper indium sulfide (CuInS 2 ), copper indium sulfide selenide (CuInS x Se 2-x ), etc., collectively referred to as CIS film as the representative I-III-VI optoelectronic semiconductor film has a suitable band gap (1.04-1.5eV), high light absorption coefficient (>10 5 / cm), without photodegradation effect, is currently the most promising photoelectric conversion material. CIS films are usually chalcopyrite ...

Claims

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Application Information

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IPC IPC(8): H01L31/0336H01L31/18C30B29/46
CPCY02P70/50
Inventor 靳正国杨靖霞李成杰柴雅婷张伟
Owner TIANJIN UNIV
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