Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of synthetic method of selenium germanium gallium barium polycrystal and the growth method of selenium germanium gallium barium single crystal

A synthesis method, selenium germanium technology, applied in the direction of single crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problems of invalid crystal nuclei and uncertain direction of single crystal growth, non-stoichiometric ratio and low yield , to achieve the effect of increasing yield, avoiding volatilization and avoiding explosion

Active Publication Date: 2020-09-08
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve the technical problems of low non-stoichiometric ratio and low yield of the existing selenium-germanium-gallium-barium polycrystal synthesis and the technical problems that invalid crystal nuclei are easily formed in the spontaneous nucleation stage of selenium-germanium-gallium-barium and the growth direction of the single crystal is uncertain. Provide polycrystalline synthesis method and single crystal growth method of selenium germanium gallium barium

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment 1, polycrystalline synthesis experiment one of selenium germanium gallium barium

[0026] The raw materials barium (Ba), gallium (Ga), germanium (Ge) and selenium (Se) used are all 6N grades. When mixing ingredients, the molar ratio of each raw material is barium: gallium: germanium: selenium = 1:2:1: 6. Properly enrich selenium (0.5%-1.5% in excess) according to the above ratio for batching: 35.082 grams of barium, 35.626 grams of gallium, 18.553 grams of germanium and 122.501 grams of selenium.

[0027] The synthesis process steps are as follows:

[0028] 1. Reaction vessel cleaning and drying

[0029] Soak and rinse the quartz tube and PBN boat with tap water, soak in aqua regia for 24 hours, then rinse with tap water until neutral, place in an ultrasonic cleaning tank for oscillating cleaning for 30 minutes, rinse with deionized water repeatedly, and then use high-purity Clean with alcohol, dry in a 100°C oven for later use.

[0030] 2. Loading

[003...

Embodiment 2

[0035] Embodiment 2, polycrystalline synthesis experiment two of selenium germanium gallium barium

[0036] The raw materials barium (Ba), gallium (Ga), germanium (Ge) and selenium (Se) used are all 6N grades. When mixing ingredients, the molar ratio of each raw material is barium: gallium: germanium: selenium = 1:2:1: 6. Properly enrich selenium (0.5%-1.5% in excess) according to the above proportions: 17.541 grams of barium, 17.813 grams of gallium, 9.277 grams of germanium and 60.823 grams of selenium.

[0037] The synthesis process steps are as follows:

[0038] 1. Reaction vessel cleaning and drying

[0039] Soak and rinse the quartz tube and PBN boat with tap water, soak in aqua regia for 24 hours, then rinse with tap water until neutral, place in an ultrasonic cleaning tank for oscillating cleaning for 30 minutes, rinse with deionized water repeatedly, and then use high-purity Clean with alcohol, dry in a 100°C oven for later use.

[0040] 2. Loading

[0041]First p...

Embodiment 3

[0045] Embodiment 3, single crystal growth experiment one of selenium germanium gallium barium

[0046] The single crystal growth method of the barium selenium germanium gallium of the present embodiment comprises the following steps:

[0047] 1. Soak the PBN crucible and quartz tube for crystal growth in aqua regia, then wash and dry with ultrapure water; the PBN crucible for single crystal growth is cylindrical with a seed crystal well, the length of the PBN crucible is 200mm, the inner diameter is 30mm, and the front end The inner diameter of the seed crystal well is 2mm, and the length is 30mm;

[0048] 2. Add 300 grams of polycrystalline selenium, germanium, gallium and barium into the crucible, then place the crucible vertically in the quartz tube, and evacuate the quartz tube to 10 -4 Pa, and finally seal the quartz tube with a hydrogen-oxygen flame;

[0049] 3. Put the fused quartz tube into the vertical double-temperature-zone tubular resistance furnace. The growth ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a synthesis method for a selenium germanium gallium barium polycrystal and a growth method for a selenium germanium gallium barium monocrystal. The growth of the polycrystal comprises the following steps: putting elemental Ga, elemental Ba and elemental Ge into a PBN boat; then placing the PBN boat at one end of a quartz tube and placing elemental Se at the other end of thequartz tube; conducting vacuumizing, and then carrying out heat sealing; and then putting the quartz tube into a horizontal double-temperature-region resistor furnace for synthesizing, so as to obtain a high-purity single-phase selenium germanium gallium barium polycrystal raw material, wherein the yield of the raw material is greater than 99%. The growth of the selenium germanium gallium bariummonocrystal comprises the following steps: adding the selenium germanium gallium barium polycrystal into a crystal growth crucible and vertically placing the crystal growth crucible into a quartz tube; conducting vacuumizing, and then carrying out heat sealing; and then putting the quartz tube into a vertical double-temperature-region resistor furnace, so as to obtain the selenium germanium gallium barium monocrystal after the growth of the monocrystal is finished. The selenium germanium gallium barium monocrystal obtained by the method disclosed by the invention has the advantages of few defects, high infrared band transmission rate and the like and can be used as a far infrared laser frequency conversion material.

Description

technical field [0001] The invention belongs to the technical field of high-performance nonlinear optical crystals, in particular, the invention relates to polycrystal synthesis and single crystal growth methods of mid- and far-infrared nonlinear optical materials. Background technique [0002] The all-solid-state laser with infrared nonlinear optical crystal as the key core component can generate mid-to-far infrared laser in the 3-17μm band through frequency conversion under the near-infrared laser pump. fields have a wide range of applications. Selenium germanium gallium barium, the molecular formula is BaGa 2 GeSe 6。 , is a new type of infrared nonlinear optical crystal with excellent performance, and its nonlinear optical effect is large (d 11 =49pm / V), high transmittance in the middle and far infrared range, large birefringence, high laser damage threshold, and has important application value. [0003] At present, the method for synthesizing selenium-germanium-galli...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/355C30B29/46C30B28/02C30B11/00
CPCC30B11/00C30B28/02C30B29/46
Inventor 姚吉勇郭扬武李壮罗晓宇
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com