Chemical modification method of aromatic diazo salt to ZnO nanostructured surface

A chemical modification and nanostructure technology, applied in the field of surface chemistry, can solve the problems of large electron transport restrictions, achieve stable nanostructures, simple modification methods, and improve surface properties

Inactive Publication Date: 2008-11-12
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a method for chemically modifying the surface of ZnO nanostructures with aromatic di

Method used

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  • Chemical modification method of aromatic diazo salt to ZnO nanostructured surface
  • Chemical modification method of aromatic diazo salt to ZnO nanostructured surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] (1) Cut the ZnO nanorod sample grown on the zinc substrate into a square sheet of 5mm*5mm, first soak the sheet in absolute ethanol to achieve complete immersion, ultrasonic treatment for 30 minutes, then take it out, and then use deionized Water was sonicated for 10 minutes, removed and dried under nitrogen for 10 minutes.

[0019] (2) the aromatic diazonium salt 2.93mg dissolved in 100mL acetonitrile dubbed 1*10 -4 mol / L solution, the ZnO nanorod flakes were soaked in the above solution for 24 hours under the condition of avoiding light.

[0020] (3) The above-mentioned ZnO nanorod flakes were taken out from the aromatic diazonium salt acetonitrile solution, and irradiated under a 250w ultraviolet lamp for 3 minutes.

[0021] (4) Wash in acetonitrile, acetone, and ethanol solvents for 2 minutes each to remove aromatic diazonium salts physically adsorbed on the surface of ZnO nanorods without participating in chemical reactions, and dry in a nitrogen environment for...

Embodiment 2

[0024] (1) Cut the ZnO nanorod sample grown on the zinc substrate into a square sheet of 5mm*5mm, first soak the sheet in absolute ethanol to achieve complete immersion, ultrasonic treatment for 30 minutes, then take it out, and then use deionized Water was sonicated for 10 minutes, removed and dried under nitrogen for 10 minutes.

[0025] (2) the aromatic diazonium salt 2.69mg dissolved in 100mL acetonitrile dubbed 1*10 -4 mol / L solution, the ZnO nanorod flakes were soaked in the above solution for 24 hours under the condition of avoiding light.

[0026] (3) The above-mentioned ZnO nanorod flakes were taken out from the aromatic diazonium salt acetonitrile solution, and irradiated under a 250w ultraviolet lamp for 3 minutes.

[0027] (4) Wash in acetonitrile, acetone, and ethanol solvents for 2 minutes each to remove the aromatic diazonium salt physically adsorbed on the surface of the ZnO nanorods without participating in the chemical reaction, and dry in a nitrogen envir...

Embodiment 3

[0029] (1) Cut the ZnO nanorod sample grown on the zinc substrate into a square sheet of 5mm*5mm, first soak the sheet in absolute ethanol to achieve complete immersion, ultrasonic treatment for 30 minutes, then take it out, and then use deionized Water was sonicated for 10 minutes, removed and dried under nitrogen for 10 minutes.

[0030] (2) the aromatic diazonium salt 3.79 mg was dissolved in 100 mL of acetonitrile to make a solution of 1*10-4 mol / L, and the ZnO nanorod flakes were soaked in the above solution for 24 hours in the dark.

[0031] (3) The above-mentioned ZnO nanorod flakes were taken out from the aromatic diazonium salt acetonitrile solution, and irradiated under a 250w ultraviolet lamp for 3 minutes.

[0032] (4) Wash in acetonitrile, acetone, and ethanol solvents for 2 minutes each to remove the aromatic diazonium salt physically adsorbed on the surface of the ZnO nanorods without participating in the chemical reaction, and dry in a nitrogen environment fo...

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Abstract

The invention relates to a chemical modification method for a surface of ZnO nanostgructure with aromatic diazo salt, belonging to the functional material and surface chemistry field. The method comprises the steps that: ZnO with the nanostructure is immersed in absolute ethyl alcohol, is subject to the ultrasonic processing, washed by deionized water for ultrasonic washing, taken out and dried in nitrogen environment; under the condition of keeping out of light, the processed nano ZnO is immersed in actonitrile of aromatic diazo salt for 18 to 36 hours at a temperature of 10 and 50 DEG C; the nano ZnO modified by the aromatic diazo salt is taken out from solution, is irradiated through an ultraviolent lamp or heated, and kept for a period of time; and the nano ZnO is washed orderly with the acetonitrile, acetone and ethanol, dried in the nitrogen environment and the modification is completed. The method is simple and feasible; and the modified ZnO nanostructure is more stable, can resist the corrosion of the chloroform, the ethanol, the acetone, methylene dichloride and other various organic solvent, the content of organic carbon reaches more than 10 percent through the analysis to the modified surface with an energy dispersive x-ray spectroscopy.

Description

technical field [0001] The invention relates to a method for chemically modifying the surface of a ZnO nanostructure with an aromatic diazonium salt, belonging to the field of surface chemistry. Background technique [0002] Nano-ZnO, as an excellent semiconductor oxide material, exhibits incomparable superior properties of other materials in optoelectronics, mainly with strong ultraviolet absorption and significant quantum confinement effect, low threshold high-efficiency optoelectronic properties, ultraviolet laser emission and pressure Electrical, photocatalytic, and carrier transport properties. It has broad application prospects in many aspects such as solar cells, ceramic industry, detection materials, buffer layers, piezoelectric devices, image recording, optical waveguides and military invisibility. However, nano-ZnO also has the following defects: the surface structure of nano-ZnO particles is complex, the surface electrons are seriously lacking, and its physical a...

Claims

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Application Information

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IPC IPC(8): C01G9/02
Inventor 董宇平赵玮佟斌支俊格潘月秀石建兵申进波
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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