Cleaning fluid for cleaning plasma etching residue

Abstract

The invention discloses washing liquid used in the semiconductor industry to wash plasma etching residues. The washing liquid contains citric acid / citrate buffer solution, fluorides, macromoledular corrosion inhibitor, anti-freeze agent and solvent. The washing liquid can effectively wash the plasma etching residues during the process of manufacturing a semiconductor, have low etching velocity on nonmetals and metal substrates such as Si, SiO2, tetraethoxy silane silicon dioxides (PETEOS), low-medium materials, Ti, Al, Cu and so on, is safe and harmless to the environment and the human body, and has good application prospect in the microelectronic field such as washing of semiconductor wafers and so on.

Description

technical field [0001] The invention relates to a cleaning solution in a semiconductor manufacturing process, in particular to a cleaning solution for cleaning plasma etching residues. Background technique [0002] In the manufacturing process of semiconductor components, the coating, exposure and imaging of photoresist layers are necessary process steps for the pattern manufacturing of components. Residues of photoresist material need to be completely removed at the end of patterning (ie, after photoresist coating, imaging, ion implantation, and etching) before proceeding to the next process step. Ion bombardment during the doping step hardens the photoresist polymer, thus making the photoresist less soluble and thus more difficult to remove. To date, a two-step process (dry ashing and wet etching) has generally been used in the semiconductor manufacturing industry to remove this photoresist film. The first step uses dry ashing to remove most of the photoresist layer (PR)...

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to solve the problems of poor or unstable cleaning effect of the existing ion etching residue cleaning solution, great corrosion to the substrate, small operating window, and environmental pollution, and provide a cleaning solution with strong cleaning ability and Low etch rate, safe and non-toxic plasma etch residue cleaning solution

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