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Semiconductor device, led head and image forming apparatus

A semiconductor and substrate technology, applied in the field of semiconductor devices, LED heads and image forming devices, can solve the problem of reducing the heat dissipation effect

Inactive Publication Date: 2012-08-08
OKI DATA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the above-mentioned disclosed technology, there is the following problem that must be solved: since the sapphire substrate is interposed between the light-emitting area and the diamond substrate, the main heat-generating area is far away from the material with high thermal conductivity, which will reduce the heat dissipation effect.

Method used

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  • Semiconductor device, led head and image forming apparatus
  • Semiconductor device, led head and image forming apparatus
  • Semiconductor device, led head and image forming apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0087] In this embodiment, in order to minimize the distance between the main heating area and the substrate with high thermal conductivity, and effectively conduct heat energy to the outside of the device, the following structure is adopted:

[0088] figure 1 It is a perspective view of the semiconductor device of the first embodiment.

[0089] figure 2 It is a sectional view of the semiconductor device of the first embodiment.

[0090] As shown in the figure, in the semiconductor device 100 of Embodiment 1, the surface of the metal substrate 101 is covered with a surface coating layer 102 , and a semiconductor thin film layer 103 is bonded thereon. figure 2 The structure of the semiconductor thin film layer 103 is not indicated in the figure, and the semiconductor thin film layer 103 is a semiconductor thin film with semiconductor elements. Semiconductor elements include light-emitting diodes, semiconductor lasers (lasers), integrated circuits, sensors (sensors), light-...

Embodiment approach 2

[0171] In order to improve the luminous efficiency of the light-emitting element, this embodiment is based on the structure of Embodiment 1, and a metal layer with a higher light reflectivity is added on the metal substrate, and the following structure is adopted:

[0172] Figure 39 It is a plan view of the LED device of the second embodiment.

[0173] Figure 40 for Figure 39 Enlarged front view of the A-A section.

[0174] Refer below Figure 39 with Figure 40 A second embodiment will be described.

[0175] exist Figure 39 Among them, 411 is the GaAs layer (contact layer) on the first conductive side. 415 is the GaAs layer (contact layer) on the second conductive side. 417 is a second conductive side electrode. 417b is a wiring on the second conductive side, and 417c is a connection pad on the second conductive side. 418 is a first conductive side electrode. 418b is a first conductive side wiring, and 418c is a common wiring for connecting a plurality of first...

Embodiment approach 3

[0185]Different from Embodiment 1 and Embodiment 2, in this embodiment, a semiconductor thin film is bonded on an independent diamond-like carbon substrate for the purpose of further improving the heat dissipation effect.

[0186] Figure 42 It is a cross-sectional view of the semiconductor device of the third embodiment.

[0187] exist Figure 42 Among them, 501 is a diamond-like carbon substrate. 510 is a semiconductor thin film layer. The surface of the diamond-like carbon substrate preferably has the same flatness as the surface state described in the first embodiment. That is, Ra≤5nm, RPV≤10nm, preferably Ra≤3nm, RPV≤5nm. In addition, it is preferable that Rmax≤1 / 1000.

[0188] Figure 43 It is a sectional view of the LED element of the third embodiment.

[0189] Figure 43 It is a specific example of the semiconductor thin film layer 510 in the third embodiment. As shown in the figure, the LED element 450 of Embodiment 3 is the LED thin film element 410 of Embod...

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Abstract

A semiconductor device is supplied which is able to efficiently liberate heat produced by semiconductor element toward external, prevent temperature rise, improve operation characteristic and maintain stable operation. The semiconductor device comprises a substrate and a semiconductor thin film layer which is accumulated on the substrate and contains semiconductor element, the substrate is a metal substrate, between the metal substrate and the semiconductor thin film layer, a diamond-like carbon layer with high heat conductivity and good insulativity is furnished as a surface coating layer.

Description

technical field [0001] The present invention relates to a semiconductor device, an LED head, and an image forming apparatus, and particularly to a semiconductor device, an LED head, and an image forming apparatus having improved characteristics and reliability by effectively dissipating heat generated by semiconductor elements. Background technique [0002] The semiconductor element generates heat during operation, or the area where the most heat is generated in the semiconductor element is the working area. For example, in the case of a light-emitting diode (diode), the vicinity of the PN connection or the light-emitting region of the active layer becomes the center of heat generation. An increase in the temperature of the semiconductor element adversely affects the characteristics and reliability of the semiconductor device. In order to avoid this adverse effect, it is necessary to efficiently conduct heat energy generated by the semiconductor element to the outside of th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/373B41J2/45G03G15/04H01L33/08H01L33/32H01L33/64
CPCH01L2924/0002H01L33/642H01L33/641H01L2924/00
Inventor 荻原光彦鹭森友彦铃木贵人藤原博之猪狩友希佐久田昌明
Owner OKI DATA CORP
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