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Arrayed optical address electric potential sensor chip and its manufacture method

A technology of a potential sensor and a manufacturing method, applied in the field of sensors, can solve the problems of long-term immersion, unsatisfactory noise suppression effect, pollution of sensitive areas, etc., and achieve the effects of shortening lifespan, facilitating positioning, and suppressing noise

Inactive Publication Date: 2012-01-04
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The former will pollute the sensitive area during the photolithography process, and if it is covered with photoresist, it still has the limitation that it cannot be soaked in the solution for a long time; although the latter has no corresponding pollution, the suppression effect on noise is not ideal

Method used

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  • Arrayed optical address electric potential sensor chip and its manufacture method
  • Arrayed optical address electric potential sensor chip and its manufacture method
  • Arrayed optical address electric potential sensor chip and its manufacture method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Such as Figure 4 As shown, the fabrication method of the arrayed light addressable potential sensor chip comprises the following steps:

[0030] 1) After the silicon substrate 1 is cleaned and dried, a thick oxide layer is grown by a thermal oxidation method, such as Figure 4 as shown in (a);

[0031] 2) On the oxide layer on the front side of the silicon substrate 1, a positive photoresist layer is coated by a spin method, and pre-baked in an oven at 80° C., then a mask is placed on the photoresist layer, and UV light is used to Exposure, the pattern of the mask plate is a rectangular array, the size of each rectangle is 1mm×1mm, and the distance between the rectangles is 1mm. After exposure, it is developed with a positive photoresist developer, and the film is hardened in an oven at 80°C. Etching with a silicon dioxide buffered etchant to remove the exposed oxide layer on the silicon substrate 1, then boiling the silicon substrate 1 in concentrated sulfuric acid ...

Embodiment 2

[0038] Such as Figure 4 As shown, the fabrication method of the arrayed light addressable potential sensor chip comprises the following steps:

[0039] 1) After the silicon substrate 1 is cleaned and dried, a thick oxide layer is grown by a thermal oxidation method, such as Figure 4 as shown in (a);

[0040] 2) On the oxide layer on the front side of the silicon substrate 1, a positive photoresist layer is coated by a spin method, and pre-baked in an oven at 100° C., then a mask is placed on the photoresist layer, and it is processed with ultraviolet light. Exposure, the pattern of the mask plate is a rectangular array, the size of each rectangle is 5mm×5mm, and the distance between the rectangles is 3mm. After exposure, it is developed with a positive photoresist developer, and the film is hardened in an oven at 100°C. Etching with a silicon dioxide buffered etchant to remove the exposed oxide layer on the silicon substrate 1, then boiling the silicon substrate 1 in conce...

Embodiment 3

[0047] Such as Figure 4 As shown, the fabrication method of the arrayed light addressable potential sensor chip comprises the following steps:

[0048] 1) After the silicon substrate 1 is cleaned and dried, a thick oxide layer is grown by a thermal oxidation method, such as Figure 4 as shown in (a);

[0049] 2) On the oxide layer on the front side of the silicon substrate 1, a positive photoresist layer is coated by a spin method, and pre-baked in an oven at 88° C., then a mask is placed on the photoresist layer, and UV light is used to Exposure, the pattern of the mask plate is a rectangular array, the size of each rectangle is 3mm×3mm, and the distance between the rectangles is 2mm. After exposure, it is developed with a positive photoresist developer, and the film is hardened in an oven at 88°C. Etching with a silicon dioxide buffered etchant to remove the exposed oxide layer on the silicon substrate 1, then boiling the silicon substrate 1 in concentrated sulfuric acid ...

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Abstract

The invention discloses an array optical address potential sensor chip and preparation method thereof. The array optical address potential sensor chip comprises silicone base chip and a plurality of sensitive zones are provided on the front face of the silicone base chip and a front face heavily doped layer is provided on the silicone base chip around the sensitive zones. An oxide layer is mounted above the sensitive zones and the front face heavily doped layer. A chip electrode is set on the thick oxide layer above the front face heavily doped layer. A back face heavily doped layer is set onthe back face of the silicone base chip and an aluminium electrode is set on the back face of the heavily doped layer. The silicone base chip between the sensitive zones is heavily doped and the thick oxide layer grows on the heavily doped layer and the chip electrode is set on the thick oxide layer. The chip can increase the degree of freedom of the coating sensitive membrane and the chip electrode can directly be connected with the external circuit to measure without other electrode. The back face heavily doped layer can form good ohmic contact with the aluminium electrode and silicone basechip. The preparation method uses standard semiconductor technology to ensure the consistency of the chip performance.

Description

technical field [0001] The invention relates to a sensor, in particular to an arrayed light addressing potential sensor chip and a manufacturing method thereof. Background technique [0002] Light Addressable Potentiometric Sensor (LAPS) is a biochemical sensor using the principle of semiconductor field effect. Because of its simple preparation process, low packaging requirements, good potential stability, high sensitivity, short response time, and movable light source during measurement, it has attracted extensive research and application. Optically addressable potential sensors can be classified into a MIS (metal / insulator / semiconductor) structure and an EIS (electrolyte solution / insulator / semiconductor) structure. MIS structured light addressing potential sensor is generally used to measure the composition of gas, EIS structured light addressing potential sensor can be used to detect the pH value of the solution, the concentration of different ions in the solution, the a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N33/50
Inventor 朱大中戴春祥
Owner ZHEJIANG UNIV
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