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Flux growth method for CsLiB6O10 crystal

A growth method and crystal growth technology, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of high growth temperature and high viscosity of the growth system, so as to improve repeatability, reduce volatilization, and reduce viscosity. Effect

Inactive Publication Date: 2008-08-20
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to overcome prior art growth CsLiB 6 o 10 The defects of high growth temperature and high viscosity of the growth system exist in the crystal, so as to provide a CsLiB that can grow at a lower temperature, have a low viscosity of the growth system, and have high optical quality 6 o 10 Crystal Flux Growth Method

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Embodiment 1: adopt flux method to prepare CsLiB 6 o 10 the crystal

[0028] to CsLiB 6 o 10 Powder (CsLiB 6 o 10 The powder is prepared by mixing Cs with a purity of 99.99% 2 CO 3 : Li 2 CO 3 :H 3 BO 3 After the raw materials with a molar ratio of 1:1:6 are mixed evenly, carry out solid-phase chemical synthesis (reaction) and analytically pure NaF as raw materials, according to the molar ratio of CsLiB 6 o 10 : NaF=1:1 ingredients, weigh 729.41gCsLiB 6 o 10 Powder, 83.98gNaF, that is, the molar ratio of CsLiB in the growth system 6 o 10 :NaF=1:1. After grinding and mixing the weighed raw materials evenly, they are directly melted in an open platinum crucible of Φ100mm×75mm. Seal the opening of the crucible, leave a small hole for the seed rod to enter and exit at the position corresponding to the top of the furnace and the center of the crucible, raise the temperature to 900°C to completely melt the above-mentioned melting material, and keep it at this...

Embodiment 2

[0031] Embodiment 2: adopt flux method to prepare CsLiB 6 o 10 the crystal

[0032] to CsLiB 6 o 10 Powder (CsLiB 6 o 10 The powder is prepared by mixing Cs with a purity of 99.99% 2 CO 3 : Li 2 CO 3 :H 3 BO 3 After the raw materials with a molar ratio of 1:1:6 were mixed evenly, solid-phase chemical synthesis was carried out) and analytically pure CaCl 2 As raw material, according to molar ratio CsLiB 6 o 10 : CaCl 2 = 1:10 ingredients, weigh 182.35g CsLiB 6 o 10 Powder, 554.91gCaCl 2 , that is, the molar ratio of CsLiB in the growth system 6 o 10 : CaCl 2 =1:10. After grinding and mixing the weighed raw materials evenly, they are directly melted in an open platinum crucible of Φ100mm×75mm. Seal the opening of the crucible, leave a small hole for the seed rod to enter and exit at the position corresponding to the top of the furnace and the center of the crucible, raise the temperature to 900°C to completely melt the above-mentioned melting material, and k...

Embodiment 3

[0035] Embodiment 3: adopt flux method to prepare CsLiB 6 o 10 the crystal

[0036] to CsLiB 6 o 10 Powder (CsLiB 6 o 10 The powder is prepared by mixing Cs with a purity of 99.99% 2 CO 3 : Li 2 CO 3 :H 3 BO 3 After the raw materials with a molar ratio of 1:1:6 were mixed evenly, solid-phase chemical synthesis was carried out) and analytically pure Na 4 V 2 o 7 As raw material, according to molar ratio CsLiB 6 o 10 :Na 4 V 2 o 7 = 1:0.5 ingredients, weigh 729.42g CsLiB 6 o 10 Powder, 305.84gNa 4 V 2 o 7 , that is, the molar ratio of CsLiB in the growth system 6 o 10 :Na 4 V 2 o 7 =1:0.5. After grinding and mixing the weighed raw materials evenly, they are directly melted in an open platinum crucible of Φ100mm×75mm. Seal the opening of the crucible, leave a small hole for the seed rod to enter and exit at the position corresponding to the top of the furnace and the center of the crucible, raise the temperature to 900°C to completely melt the above-m...

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Abstract

The invention relates to a growing method of a fluxing agent of CsLiB6O10 crystals; the CsLiB6O10 and the fluxing agent are mixed according to molar ratio and carried out by pretreatment, thus obtaining a melt; the flux is M'X, M''X2, PbO, Bi2O3, M'3Mo3O10 or M'4V2O7, wherein, M' is Li, Na or K; M'' is Ca, Ba or Pb; X is F or Cl; the melt lowers to 2-10 DEG C above the saturated temperature, added with seed crystals and lowers to the saturated temperature after constant temperature; and the saturated temperature becomes initial temperature and the temperature lowers at the speed ratio of 0.01-1 DEG C / day; after the crystals grow to required size, seed rod crystals are lifted out of solution and reduced to room temperature at the speed ratio below 20 DEG C / h, thus obtaining the CsLiB6O10 crystals. The method can lower growth temperature, reduce the volatility and viscosity of a growth system, is beneficial for solute transporting and can grow optical crystals with high optical quality.

Description

technical field [0001] The present invention relates to a kind of growth method of single crystal, specifically make and relate to CsLiB 6 o 10 Flux growth method for nonlinear optical crystals. Background technique [0002] Cesium lithium borate (CsLiB 6 o 10 , referred to as CLBO) crystal is a newly discovered nonlinear optical crystal material in the 1990s. CLBO crystals are melted with the same composition, and the melting point is 848°C. The crystal has the advantages of large nonlinear coefficient, high resistance to light damage threshold, wide light transmission range, stable chemical properties, and easy growth of large-size CLBO single crystals. The comprehensive performance of the crystal is very good, especially the frequency doubling performance in the ultraviolet band, so that it has broad application prospects in wide-band tunable lasers, all-state short-wavelength lasers, especially deep ultraviolet all-state lasers. Currently CsLiB 6 o 10 Crystal gro...

Claims

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Application Information

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IPC IPC(8): C30B29/22C30B11/00
Inventor 胡章贵余雪松
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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