Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for manufacturing silicon base body stephanoporate ferrite thin film with hydrotalcite forerunner method

A technology of silicon matrix and hydrotalcite is applied in the field of preparation of silicon matrix porous ferrite film prepared by hydrotalcite precursor method, and achieves the effects of uniform pore size distribution, uniform magnetic domain structure and strong adhesion

Inactive Publication Date: 2008-08-20
BEIJING UNIV OF CHEM TECH
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a kind of preparation method that hydrotalcite precursor method prepares porous ferrite thin film of silicon matrix, solves the problem of

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Accurately weigh Mg(NO 3 ) 2 ·6H 2 O, Fe(NO 3 ) 3 9H 2 O, mixed salt solution is prepared with deionized water, and the concentrations of metal ions in the solution are: [Mg 2+ ]=0.2M, [Fe 3+ ]=0.1M, put this mixed solution into a beaker. Immerse the monocrystalline silicon substrate after sulfonation for 5 days in a beaker for 60 minutes, then pour the soaked monocrystalline silicon substrate into a three-neck flask along with the mixed salt solution, and titrate with alkali (NaOH=2M) to pH 9.5. Afterwards, the original slurry and the monocrystalline silicon substrate were quickly transferred to an autoclave with a polytetrafluoroethylene liner, and hydrothermally crystallized at 180° C. for 24 hours. After naturally cooling to room temperature, rinse the monocrystalline silicon substrate repeatedly with deionized water; dry at 70°C for 24 hours, and obtain a hydrotalcite precursor film on the silicon substrate; then heat the film to 700°C at a rate of 2°C / min ...

Embodiment 2

[0023] Accurately weigh Mg(NO 3 ) 2 ·6H 2 O, Fe(NO 3 ) 3 9H 2 O, mixed salt solution is prepared with deionized water, and the concentrations of metal ions in the solution are: [Mg 2+ ]=0.6M, [Fe 3+ ]=0.2M, put this mixed solution into a beaker. A 5-day-sulfonated monocrystalline silicon substrate was immersed in a beaker for 60 minutes. Pour the soaked monocrystalline silicon substrate into a three-necked flask along with the mixed salt solution, and titrate with alkali (NaOH=2M) until the pH is 9.5. Afterwards, the original slurry and the monocrystalline silicon substrate were quickly transferred to an autoclave with a polytetrafluoroethylene liner, and hydrothermally crystallized at 180° C. for 24 hours. After natural cooling to room temperature, rinse the monocrystalline silicon substrate repeatedly with deionized water; dry at 60°C for 12 hours, and obtain a hydrotalcite precursor film on the silicon substrate; then raise the temperature of the film to 900°C at a ...

Embodiment 3

[0025] Accurately weigh Ni(NO 3 ) 2 ·6H 2 O, Fe 2 (SO 4 ) 3 ·XH 2 O, mixed salt solution was prepared with deionized water, and the concentrations of metal ions in the solution were: [Ni 2+ ]=0.2M, [Fe 3+ ]=0.1M, put this mixed solution into a beaker. The 7-day-sulfonated monocrystalline silicon substrate was immersed in a beaker for 70 minutes. Pour the soaked monocrystalline silicon substrate into a three-neck flask along with the mixed salt solution, and titrate with alkali (NaOH=2M) until the pH is 10. Afterwards, the original slurry and the monocrystalline silicon substrate were quickly transferred to an autoclave with a polytetrafluoroethylene liner, and hydrothermally crystallized at 150° C. for 24 hours. After natural cooling to room temperature, rinse the monocrystalline silicon substrate repeatedly with deionized water; dry at 60°C for 12 hours to obtain a hydrotalcite precursor film on the silicon substrate; then heat the film to 500°C at a rate of 5°C / min ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
pore size distributionaaaaaaaaaa
pore sizeaaaaaaaaaa
pore size distributionaaaaaaaaaa
Login to View More

Abstract

A preparation method which uses hydrotalcite precursor method for producing Si substrate porous ferrite film belongs to the technical field of metal-oxide film preparation, the Si substrate after sulfur treatment is completely contacted with salt ion solution, then the Si substrate attached with salt ion is put into the high-pressure reaction kettle with a polyfluortetraethylene liner for hydro-thermal synthesis crystallization so as to produce uniform and compact hydotalcite film which is then sintered with high temperature to be transferred into the coextruded film of spinel type ferrite and metal oxide, at last, after metal oxide selectively is eliminated, porous ferrite film can be obtained; the method has the advantages that the magnetic domain structure of the magnetic film is uniform so as to improve the magnetic performance, the purpose of controlling the porous ferrite film without magnetic performance can be reached, the operating method is simple, the preparation cost and the energy consumption are low and the film is beneficial to the industrialized application.

Description

technical field [0001] The invention belongs to the technical field of metal oxide thin film preparation, and is particularly suitable for a method for preparing a silicon matrix porous ferrite thin film by a hydrotalcite precursor method. Background technique [0002] Ferrite is a composite oxide composed of iron and one or more other metals, and is widely used in information storage, communication, navigation, medical biology and other fields. Ferrite is a large class of magnetic materials. It occupies a unique position in both high-frequency and low-frequency fields, and is increasingly valued by countries all over the world. Future electronic components will further develop towards miniaturization and integration. Some devices will develop from two-dimensional bulk materials to one-dimensional thin film materials. Ferrite thin films have excellent high-frequency electromagnetic properties and good mechanical resistance. The abrasiveness and stable chemical properties ma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/26C04B38/00C04B35/622
Inventor 李锋范珺范国利邹鲁项顼
Owner BEIJING UNIV OF CHEM TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com