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Method of making ZnO ultraviolet photoconductive detector with vertical structure

A vertical structure, ultraviolet light technology, applied in the field of photoelectric detection, can solve the problems of difficult preparation, poor reliability and repeatability, and achieve the effect of simple preparation process, easy control, and beneficial to photoelectric integration

Inactive Publication Date: 2008-06-18
XI AN JIAOTONG UNIV
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Problems solved by technology

However, because P-type ZnO is difficult to prepare, and the reliability and repeatability are poor, the research on ZnO-based ultraviolet detectors mainly focuses on the preparation of photoconductive detectors.

Method used

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  • Method of making ZnO ultraviolet photoconductive detector with vertical structure
  • Method of making ZnO ultraviolet photoconductive detector with vertical structure

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Embodiment Construction

[0017] The present invention deposits transparent and conductive ITO thin film 2 and ZnO thin film 3 successively on quartz glass or sapphire substrate 1, and heat treatment at 400 ℃ in oxygen for one hour, then use concentration of about 20% NH 4 The sample is corroded by the Cl solution to expose the ITO film 2 to form a ZnO mesa, and finally a metal Al electrode 4 is deposited on the surface of the ZnO mesa to obtain a ZnO ultraviolet photoconductive detector with a vertical structure. In the present invention, the thicknesses of the ITO film and the ZnO film deposited on the substrate by radio frequency reactive sputtering (RF Sputtering) are about 150 nm and 600 nm, respectively. During the deposition, an appropriate amount of oxygen is introduced into the vacuum chamber, and the introduction of oxygen can reduce the O vacancies generated during the growth process, making the ZnO film closer to the complete stoichiometric ratio; then, place the ZnO film horizontally in a q...

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Abstract

The invention discloses a method for producing a ZnO ultraviolet photoconductive detector with high-performance vertical structure; an ITO film and a ZnO film are adopted by the method to be deposited sequentially on a sapphire substrate or a quartz substrate, the ZnO film of the film undergoes the 400 DEG C thermal processing in the oxygen atmosphere, so as to improve the photoelectric response characteristic of the ZnO film, and then the ITO film is exposed after the corrosion of the ZnO film to form a ZnO table facet, and the metal A1 is deposited on the ZnO table facet and taken as the ohmic contact electrode so as to acquire the ZnO ultraviolet photoconductive detector with vertical structure. The invention has the advantages of simple manufacturing process, low cost, easy controlling, convenient optoelectronic integration, easy industrialization, and high practical value.

Description

technical field [0001] The invention belongs to the field of photoelectric detection, and relates to a preparation method of a ZnO ultraviolet photoconductive detector with a vertical structure. Background technique [0002] Ultraviolet detection technology is another new detection technology developed after infrared and laser detection technology. Ultraviolet detectors are widely used in national defense and military, astronomy, environmental monitoring, combustion engineering, water purification, flame detection, biological effects, sky communication and environmental pollution monitoring and other fields, and have extremely high military and civilian value. Especially in national defense applications, ultraviolet early warning based on missile ultraviolet radiation detection has become the research focus of ultraviolet detection. [0003] Since ZnO (Eg=3.34eV) has many advantages over other III-V wide bandgap compound semiconductors, such as higher exciton binding energy...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 张景文毕臻边旭明侯洵王东
Owner XI AN JIAOTONG UNIV
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