Method of producing amorphous silicon nanoparticles

A nanoparticle and amorphous silicon technology, applied in the direction of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of not being able to obtain highly dispersed quantum dots soluble in solvents and only obtaining nanoparticle composition, and achieve large Effects of application flexibility and range

Inactive Publication Date: 2008-05-07
NANJING UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

Conventional physical methods (such as sputtering and evaporation, etc.) cannot obtain highly dispersed quantum dots soluble in solvents, and can only obtain thin films composed of nanoparticles.

Method used

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  • Method of producing amorphous silicon nanoparticles

Examples

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Effect test

Embodiment 1

[0015] Example 1: Method of preparing silicon particles without surfactant coating.

[0016] (1) Use deionized water as the solution.

[0017] (2) Place the silicon target in a beaker filled with deionized water, and then irradiate the silicon target with a strong enough KrF excimer laser beam (as shown in Figure 1). During the irradiation, the beaker is placed on a motorized platform that moves horizontally, so that the laser beam scans on the target; at the same time, the silicon target must be completely immersed in the solution to a depth of 1 mm, but not more than 5 mm; the laser beam Focusing through the lens, the focus size is usually 4-10mm 2 , the energy density of the laser is limited to 1×108 -2 ×10 8 W / cm 2 Between; if you want to obtain a high-concentration nanoparticle solution, you can increase the irradiation time and increase the laser energy.

[0018] (3) Take out the silicon target, and the solution contains the prepared amorphous silicon quantum dots, ...

Embodiment 2

[0020] Example 2: Method for preparing surfactant-coated silicon quantum dots. The basic method is the same as that in Example 1, except that a cetyltrimethylammonium bromide solution with a concentration range of 1.0-5.0mmol / L is prepared for use in subsequent steps.

[0021] In order to keep the quantum dots for a long time without agglomeration, it is necessary to use a surfactant solution.

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Abstract

The invention provides a method for preparing amorphous silicon nanoparticles, which comprises the following steps: (1) using deionized water as a solution to prepare silicon particles not coated with surfactant; or configuring hexadecyl Trimethylammonium bromide solution was used to prepare surfactant-coated silicon quantum dots. (2) A silicon target is placed in a beaker containing the solution prepared in (1), and then the silicon target is irradiated with an excimer laser beam. (3) Taking out the silicon target, the solution contains the prepared amorphous silicon quantum dots. The beneficial effects of the present invention are that the method is simple, easy, economical and fast; non-toxic; it is expected to become the basic material of a new biosensor; Great application flexibility and range.

Description

technical field [0001] The invention relates to a method for preparing silicon (Si) nanometer particles (quantum dots). Background technique [0002] Silicon materials are the foundation of the microelectronics industry. However, silicon is a so-called indirect bandgap semiconductor and cannot emit light efficiently, so it cannot usually be made into an optoelectronic device. The basic idea to solve this problem is to break through the energy band limitation. According to the basic energy band theory, the preparation of nanoparticles smaller than 5 nanometers can break through the energy band limitation. Such small silicon particles often become silicon quantum dots. Porous silicon, silicon / silica superlattice, and silicon / silica composite thin films have been prepared and visible light emission observed. The common core of these different material systems is to obtain crystalline or amorphous silicon nanostructures below 5 nanometers, which become the source of luminescen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/021B82B3/00
Inventor 陈晓原刘治国刘俊明
Owner NANJING UNIV
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