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1.5-1.6ª–m wave band laser using erbium and ytterbium ion doped boro-ahuminate crystal as gain medium

A boroaluminate and laser technology, which is applied to lasers, phonon exciters, laser components, etc., can solve the problems of unevaluated spectral performance, energy transfer effect, no more than 250mW, continuous laser output power of only 225mW, etc.

Inactive Publication Date: 2008-04-23
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, with Er 3+ and Yb 3+ Ion-doped YCa 4 O(BO 3 ) 3 Although the laser with the crystal as the gain medium has a slope efficiency as high as 26.8%, the output power of the continuous laser is only 225mW; 3+ and Yb 3+ Ion-doped LaSc 3 (BO 3 ) 4 Although the laser with the crystal as the gain medium has a quasi-continuous laser output power of 1.1W, its slope efficiency is only 4.6%; Er 3+ and Yb 3+ The slope efficiency of ion double-doped phosphate glass material is between 15-40%, and the maximum output power generally does not exceed 250mW
In addition, although Er 3+ and Yb 3+ Ion double doped YAl 3 (BO 3 ) 4 The growth and spectrum of the crystal have been reported (Materials Research Bulletin, 39(9)(2004)1329), but it is limited to the preliminary simple measurement of the infrared and upconversion visible spectrum of the crystal material, and has not evaluated the Er in the host crystal. 3+ and Yb 3+ Spectral properties of ions and Yb 3+ to Er 3+ The energy transfer effect of ions is not mentioned in this article, and it cannot be inferred from this article that this material has the potential to simultaneously realize high-efficiency and high-power 1.5-1.6μm laser output

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0006] Example 1: 0.97μm semiconductor laser pumping Yb 3+ and Er 3+ ion activated YAl 3 (BO 3 ) 4 The crystal achieves 1.55μm laser output.

[0007] Growth doped with 25mol% Yb by molten salt method 3+ and 1.1 mol% Er 3+ ionic YAl 3 (BO 3 ) 4 crystals. At 0.97μm, Yb 3+ and Er 3+ The absorption coefficient of the ion to the pump light incident along the optical axis is 26cm -1 . According to the principle that the crystal needs to absorb about 80% of the incident pump light power in one pass, the thickness of the crystal is determined to be 0.6mm (the end area is generally between square millimeters and square centimeters). Then the end face of the crystal is polished and placed in the laser cavity. The incident coated cavity mirror is highly transparent at 0.97 μm wavelength and highly reflective at 1.55 μm wavelength (R>99%), and the exit coated cavity mirror is highly reflective at 0.97 μm wavelength (R >98%), the transmittance at 1.55μm wavelength is 1.5%. U...

example 2

[0008] Example 2: 0.97μm semiconductor laser pumping Yb 3+ and Er 3+ ion activated YAl 3 (BO 3 ) 4 The crystal achieves 1.6μm laser output.

[0009] Growth doped with 20mol% Yb by molten salt method 3+ and 1.1 mol% Er 3+ ionic YAl 3 (BO 3 ) 4 crystals. At 0.97μm, Yb 3+ and Er 3+ The absorption coefficient of the ion to the pump light incident along the optical axis is 21cm -1 . According to the principle that the crystal needs to absorb about 80% of the incident pump light power in one pass, the thickness of the crystal is determined to be 0.75mm (the end area is generally between square millimeters and square centimeters). Then the end face of the crystal is polished and placed in the laser cavity. The incident coated cavity mirror is highly transparent at 0.97 μm wavelength and highly reflective at 1.6 μm wavelength (R>99%), and the exit coated cavity mirror is highly reflective at 0.97 μm wavelength (R >98%), the transmittance at 1.6μm wavelength is 0.7%. Usi...

example 3

[0010] Example 3: 0.976μm semiconductor laser pumping Yb 3+ and Er 3+ ion-activated GdAl 3 (BO 3 ) 4 The crystal achieves 1.55μm laser output.

[0011] Growth doped with 30mol% Yb by molten salt method 3+ and 1.0 mol% Er 3+ Ionic GdAl 3 (BO 3 ) 4 crystals. At 0.976 μm, Yb 3+ and Er 3+ The ion has an absorption coefficient of 42 cm for the pump light incident along the optical axis -1. According to the principle that the crystal needs to absorb about 80% of the incident pump light power in one pass, the thickness of the crystal is determined to be 0.38mm (the end area is generally between square millimeters and square centimeters). Then the end face of the crystal is polished and placed in the laser cavity. The incident coated cavity mirror is highly transparent at 0.976 μm wavelength and highly reflective at 1.55 μm wavelength (R>99%), and the exit coated cavity mirror is highly reflective at 0.976 μm wavelength (R >98%), the transmittance at 1.55μm wavelength is...

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Abstract

This invention relates to a 1.5-1.6mum wave band laser with ErxYbR(1-x-y)Al3(BO3)4 as the gain medium, in which, x=0.05-5.00mol%, y=1.0-40.0mol%, R is Sc, Y, La, Gd or Lu or combination of several of them, and 0.93-1.00mum wave band infrared light is applied for pumping to realize 1.5-1.6mum laser output of high efficiency (higher than 20% slope efficiency) and high power ( higher than 1.5W of laser output power)at the same time.

Description

technical field [0001] The invention relates to the field of laser crystals and devices. Background technique [0002] The 1.5-1.6μm output band of the erbium laser is in the optical fiber communication window and the atmospheric transmission window, and the laser in this band is safe for human eyes, so it is widely used in national defense and civilian fields. Because Er 3+ The absorption of ions in the InGaAs semiconductor laser output band near 0.97μm is very weak. In order to improve the pumping efficiency of the semiconductor laser, Yb with a high absorption cross-section in the band near 0.97μm is usually used 3+ ions as sensitizing ions and Er 3+ The ions are doped into the gain medium. In order to increase from Yb 3+ to Er 3+ forward energy transfer rate of the ions, reducing the reverse energy transfer rate and Er 3+ The up-conversion process of ions realizes Er 3+ ion 4 I 13 / 2 For efficient population inversion of energy-level particles on a laser, the gai...

Claims

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Application Information

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IPC IPC(8): H01S3/16H01S3/0941H01S3/06H01S3/08H01S3/10
Inventor 陈雨金林炎富黄艺东龚兴红罗遵度谭奇光
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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