Dysprosium-terbium co-doped scandium-containing garnet laser crystal and preparation method thereof, and application of LD pumping of the crystal to realize yellow laser output
A laser crystal and garnet technology, applied in lasers, crystal growth, laser parts and other directions, can solve the problems of low stimulated emission cross-section, low thermal conductivity, and high laser threshold, and achieve the effect of reducing threshold and high thermal conductivity.
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Embodiment 1
[0044] Example 1: Dy 3+ ,Tb 3+ Co-doped scandium-containing garnet laser crystal Dy,Tb:YSAG
[0045] Growth Dy 3+ Doping concentration is 2at%, Tb 3+ Doping concentration of 1at% Dy 0.06 Tb 0.03 Y 2.91 sc 2 al 3 o 12 crystals. Dy in this example 3+ The concentration is 2at%, Tb 3+ The doping concentration is 1at%, that is, the molecular formula Dy x Tb y A 3-x-y sc 2 B 3 o 12 Wherein x=0.06, y=0.03, A is Y in the component, B is Al.
[0046] The preparation method is as follows: the high-purity oxide raw material is used according to the chemical reaction formula:
[0047] 0.03 Dy 2o 3 +0.0075Tb 4 o 7 +1.455Y 2 o 3 +Sc 2 o 3 +1.5Al 2 o 3
[0048] = Dy 0.06 Tb 0.03 Y 2.91 sc 2 al 3 o 12 +0.00375O 2
[0049] Accurately weigh a total of 610g, then uniformly mix the raw materials and briquette, and use high-temperature solid-phase method to sinter at 1400°C for 48 hours to obtain Dy 0.06 Tb 0.03 Y 2.91 sc 2 al 3 o 12 Polycrystalline raw m...
Embodiment 2
[0051] Example 2: GaN LD pumping Dy x Tb y A 3-x-y sc 2 B 3 o 12 Crystal Realizes Yellow Laser Output
[0052] A GaN laser diode with an output wavelength of 450nm is used as the pump source, and the end-pumped Dy x Tb y A 3-x-y sc 2 B 3 o 12 Crystal element, the element size is 3×3×10mm 3 , the two end faces have a very high degree of parallelism and are finely polished. The laser experiment device is attached Figure 5 shown. The laser resonator adopts a flat cavity structure, and the cavity mirror is composed of an input coupling mirror M1 and an output coupling mirror M2; the M1 mirror is coated with a 450nm antireflection coating and a 585nm high reflection coating, and the M2 mirror is coated with a 585nm partially transparent coating. 3-5%; the distance between M1 and M2 is 2cm-4cm. The laser output from the GaN LD is focused by the lens and then passes through M1 and is vertically incident on the crystal end face. Dy in the crystal 3+ The ions absorb th...
Embodiment 3
[0053] Example 3: Dy 3+ ,Tb 3+ Co-doped scandium-containing garnet laser crystal Dy,Tb:LuSAG
[0054] Growth Dy 3+ Doping concentration is 1at%, Tb 3+ Doping concentration of 1at% Dy 0.03 Tb 0.03 Lu 2.94 sc 2 Al 3 o 12 crystals. Dy in this embodiment 3+ The concentration is 1at%, Tb 3+ The doping concentration is 1at%, that is, the molecular formula Dy x Tb y A 3-x-y sc 2 B 3 o 12 Where x=0.03, y=0.03, A is Lu and B is Al in the components. The preparation method is as follows: the high-purity oxide raw material is used according to the chemical reaction formula:
[0055] 0.015 Dy 2 o 3 +0.0075Tb 4 o 7 +1.47Lu 2 o 3 +Sc 2 o 3 +1.5Al 2 o 3
[0056] = Dy 0.03 Tb 0.03 Lu 2.94 sc 2 Al 3 o 12 +0.00375O 2
[0057] Accurately weigh a total of 905g, then uniformly mix the raw materials and briquette, and use high-temperature solid-phase method to sinter at 1400°C for 48 hours to obtain Dy 0.03 Tb 0.03 Lu 2.94 sc 2 Al 3 o 12 Polycrystalline ra...
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