Double face high-temperature superconducting film multi-layer structures and method for producing the same

A high-temperature superconducting thin film, multi-layer structure technology, applied in the usage of superconducting elements, the manufacture/processing of superconducting devices, superconducting devices, etc. effect of widening, improving texture, and enhancing film structure and properties

Inactive Publication Date: 2008-04-16
GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the cost of its single crystal oxide substrate is relatively high

Method used

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  • Double face high-temperature superconducting film multi-layer structures and method for producing the same
  • Double face high-temperature superconducting film multi-layer structures and method for producing the same
  • Double face high-temperature superconducting film multi-layer structures and method for producing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Such as figure 1 Shown is a schematic structural view of a large-area double-sided superconducting thin film prepared in one of the embodiments of the present invention. Among them, 1 is silicon single crystal double-sided polished substrate, 2 is metal Fe film, 3 is MgO film with biaxial texture, 4 is CeO 2 (100) film, 5 is YBCO superconducting film.

[0036] The silicon single crystal substrate is polished on both sides. Under vacuum and non-oxidizing conditions, a metal Fe thin film is deposited on the surface of a double-sided polished silicon single crystal substrate by radio frequency or direct current sputtering, and the prepared thickness is 100 nm.

[0037] A MgO metal oxide thin film layer (seed layer) with a thickness of 500nm was prepared by ion beam assisted deposition (Ion-Beam Aid Deposition) on the substrate with metal iron thin film deposited on both sides.

[0038] Epitaxial Growth of CeO on MgO Metal Oxide Thin Films Using RF Magnetron Sputtering ...

Embodiment 2

[0043] Such as figure 2 Shown is a schematic structural view of the large-area double-sided superconducting thin film prepared in Example 2 of the present invention. Among them, 1 is a high-temperature-resistant glass substrate polished on both sides, 2 is a metal Ni film, and 3 is YSZ with biaxial texture (that is, Y-stabilized ZrO 2 Thin film, its specific composition is: (Zr, Y)O 2 , Zr:Y=91:9) film, 5 is YBCO superconducting film.

[0044] Under vacuum and non-oxidizing conditions, a Ni film is deposited and prepared on the surface of a double-sided polished substrate by radio frequency or direct current sputtering, and the prepared thickness is 1 μm.

[0045]A 100nm biaxially textured YSZ film was prepared by ion beam-assisted deposition on a substrate with nickel metal film deposited on both sides. Then, a YBCO(001) film was epitaxially grown on the prepared YSZ film by DC magnetron sputtering, and the thickness of the YBCO film was 300nm. When preparing YBCO, the s...

Embodiment 3

[0047] Such as image 3 Shown is a schematic structural view of the large-area double-sided superconducting thin film prepared in Example 3 of the present invention. Among them, 1 is a double-sided polished ceramic substrate, 2 is a metal Ni film, 3 is a MgO film with biaxial texture, and 4 is CeO 2 Thin film, 5 is YBCO superconducting thin film.

[0048] Under vacuum and non-oxidizing conditions, a metal nickel film is deposited on the surface of a double-sided polished substrate by radio frequency or direct current sputtering, and the prepared thickness is 500nm.

[0049] A 300nm MgO film was prepared by ion beam-assisted deposition on the double-sided deposited metal film substrate; the prepared MgO film has the characteristics of biaxial texture, and CeO was grown epitaxially on the MgO by radio frequency magnetron sputtering 2 (100) oriented films with improved surface texture and φ scan half maximum width. CeO in this example 2 The thickness is 200nm. Then using DC ...

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Abstract

The invention discloses a double-sided high temperature super-conductive film multiple-layer structure and the preparation method. The double-sided high temperature super-conductive film multiple-layer structure comprises a non-monomorph oxide uropatagia of low cost, both sides of the non-monomorph oxide uropatagia of low cost are provided with a metal film layer, an oxide film layer of biaxial texture and a super-conductive film layer. At first, the metal film with a good surface is arranged on the non-monomorph oxide uropatagia of low cost and then the ion beam ancillary deposition technology is adopted to prepare the oxide film material of biaxial texture on the metal film, saving the expensive oxide monomorph material as the material of the uropatagia of large area of double-sided high temperature super-conductive film but choosing the Si monomorph of low cost and the like. The double-sided high temperature super-conductive film that is prepared is of low cost.

Description

technical field [0001] The invention relates to a double-sided high-temperature superconducting thin film multilayer structure and a preparation method thereof, in particular to preparing double-sided high-temperature superconducting yttrium barium copper oxide (yttrium barium copper oxide) on low-cost non-oxide single crystal substrates such as high temperature resistant glass and single crystal silicon. YBCO) film and its preparation method. Background technique [0002] Large-area double-sided high-temperature superconducting thin film materials have broad market prospects in the application of high-performance microwave filters and delay lines for communication base stations. [0003] At present, the preparation of large-area double-sided high-temperature superconducting thin film materials is based on single-crystal oxide substrates (such as LaAlO 3 , CeO 2 / Al 2 o 3 / CeO 2 , MgO, YSZ, etc.) to prepare thin film materials such as yttrium barium copper oxide (YBCO)....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B12/06H01B13/00H01L39/02H01L39/24B32B5/00
CPCY02E40/642Y02E40/60
Inventor 李弢古宏伟杨坚王霈文
Owner GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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