Single-crystal production apparatus

Abstract

A single-crystal production apparatus for growing of a silicon single-crystal according to the Czochralski method, characterized by having at least a gas rectifier tube disposed so as to surround a silicon single-crystal in a chamber for carrying out the single-crystal growing and capable of aligning the stream of gas introduced in the chamber, the gas rectifier tube having a foamed quartz material disposed thereinside. Thus, in the growing of CZ silicon single-crystal, constantly controlling of single-crystal in-plane radial F / G at a given value can be accomplished to thereby enable efficient production of a silicon single-crystal having in-plane uniform desirable defect regions. Further, any Fe and Cu impurity contamination can be avoided to thereby provide a single-crystal production apparatus capable of production of a high-quality silicon single-crystal.

Description

technical field [0001] The present invention relates to a single crystal production device for producing a silicon single crystal by the Czochralski Method (hereinafter referred to as the CZ method), and more specifically relates to a single crystal production device which is used in the pulling unit During crystallization, the temperature gradient near the solid-liquid interface in the direction of the long axis of the crystal can be controlled so that it becomes uniform in the diameter direction of the single crystal, thus, a silicon single crystal can be produced, and the required defect region is on the surface. In addition, it is possible to produce a high-quality silicon single crystal with less pollution caused by impurity metal elements. Background technique [0002] Single crystals used as substrates of semiconductor devices, such as silicon single crystals, are mainly produced by the CZ method. In recent years, the high-integration and miniaturization of semicondu...

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Problems solved by technology

[0020] However, when cultivating silicon single crystals, if heavy metals such as Fe and Cu are released from the gas straightening cylinder, these heavy metal components will first adhere to the surface of the single crystal being cultured, and then in the process of cooling from high temperature to room temperature, Diffusion of Fe and Cu from the periphery of the crystal will occur, causing metal contamination in the periphery of the single crystal, especially from the periphery of the single crystal to the periphery within 10% of the diameter

Among them, the heat insulating material made of carbon fiber is not only low in purity compared with graphite members, but also has the problem of easily causing contamination by Fe, Cu, etc. because fibers tend to scatter during the cultivation of single crystals.

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