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Method for for preparing cadmiumsulfide quantum dot sensitized porous titanium dioxide photoelectrode

A porous titanium dioxide and quantum dot sensitization technology, which is applied in circuits, capacitors, electrical components, etc., can solve the problems of poor battery stability, poor crystallization performance of quantum dots, and low photoelectric conversion efficiency, and achieve good crystallization performance, stability and Improvement of photoelectric conversion performance, good light absorption and effect of photoelectric conversion performance

Inactive Publication Date: 2007-08-29
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the titanium dioxide photoelectrode prepared by the first method, the quantum dots are combined by adsorption, and the stability of the battery is poor. In the titanium dioxide photoelectrode prepared by the second method, the size of the quantum dots is adjusted by controlling the concentration of the salt , and the generated quantum dots have poor crystallization performance and low photoelectric conversion efficiency

Method used

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  • Method for for preparing cadmiumsulfide quantum dot sensitized porous titanium dioxide photoelectrode

Examples

Experimental program
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Effect test

Embodiment 1

[0017] (1) Weigh 5mmol lauryl polyoxyethylene ether, heat it in a water bath to melt, add 10ml n-butanol and 25ml cyclohexane to obtain a mixed solution, then add 2mmol cadmium nitrate and 6mmol thiourea to the mixed solution, and stir vigorously to make It dissolves; deionized water is then added to form a microemulsion;

[0018] (2) Pour the prepared microemulsion into a reaction kettle and react at 120°C for 8h; the reaction product is repeatedly washed with ethanol to remove excess surfactant, and the product is vacuum-dried at 60°C for 12h to obtain a bright yellow Powdered samples. The TEM photo of the sample is shown in Figure 1. It can be seen from the photo that the shape of the particles is regular, and the particle size is below 10nm. Pour alcohol into the powder sample to form an alcohol solution of cadmium sulfide quantum dots;

[0019] (3) 50ml of isobutyl titanate was added dropwise to 300ml of 0.1M nitric acid solution at room temperature, stirred vigorously,...

Embodiment 2

[0024] (1) Weigh 5mmol of polyoxyethylene lauryl ether, heat it in a water bath to melt, add 15ml of n-butanol and 30ml of cyclohexane to obtain a mixed solution, then add 2mmol of cadmium nitrate and 8mmol of thiourea to the mixed solution, and stir vigorously Make it dissolve; then add deionized water to form a microemulsion;

[0025] (2) Pour the prepared microemulsion into a reaction kettle and react at 200°C for 5h; wash the reaction product repeatedly with ethanol to remove excess surfactant, and dry the product in vacuum at 60°C for 12h to obtain a bright yellow powder sample. Pour alcohol into the powder sample to form an alcohol solution of cadmium sulfide quantum dots;

[0026] (3) prepare titanium dioxide film with embodiment 1;

[0027] (4) Soak the porous titanium dioxide film in the alcohol solution of oxalic acid and thioglycolic acid for 24h, the molar concentration of oxalic acid in the solution is 2mmol / L, and the molar concentration of thioglycolic acid is...

Embodiment 3

[0029] (1) take by weighing 5mmol sodium dodecylbenzene sulfonate, heating in a water bath makes it melt, add 5ml n-butanol, 15ml hexanaphthene, obtain mixed solution, then add 3mmol cadmium nitrate and 6mmol thiourea in mixed solution, Stir vigorously to dissolve; then add deionized water to form a microemulsion;

[0030] (2) Pour the prepared microemulsion into a reaction kettle and react at 100° C. for 10 h. The reaction product was repeatedly washed with ethanol to remove excess surfactant, and the product was vacuum-dried at 60° C. for 12 hours to obtain a bright yellow powder sample. Pour alcohol into the powder sample to form an alcohol solution of cadmium sulfide quantum dots;

[0031] (3) prepare titanium dioxide film with embodiment 1;

[0032] (4) Soak the porous titanium dioxide film in the alcohol solution of oxalic acid and thioglycolic acid for 24h, the molar concentration of oxalic acid in the solution is 2mmol / L, and the molar concentration of thioglycolic a...

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Abstract

This invention discloses a method for preparing CdS quantum point sensitized porous TiO2 photo-electrode including the following steps: bathing a surface-active agent and melting it, adding n-butyl alcohol and hexamethylene alkyl to get a mixed solution, then adding Cd(NO3)2 and sulfocarbamide into the solution and adding deionized water after being dissolved to form a micro emulsion solution to be poured into a reaction kettle to be composed in hot water, then repeatedly cleaning the reaction product to be dried in vacuum and filled with alcohol to form an alcohol solution of CdS quantum points, preparing a TiO2 porous film with a sol gel method or a hot-water crystal method to be dipped in an alcohol solution of oxalic acid and acetic acid then in the CdS quantum point alcohol to assemble it on the surface and in the cavities of the TiO2 porous film.

Description

technical field [0001] The invention relates to a method for preparing an inorganic semiconductor quantum dot sensitized porous titanium dioxide photoelectrode for a solar battery, in particular a method for preparing a cadmium sulfide quantum dot sensitized porous titanium dioxide photoelectrode. Background technique [0002] As the global energy crisis is getting worse, people are eager to find sustainable clean energy. Solar energy, as an inexhaustible natural energy source, has increasingly attracted the attention of countries all over the world. Compared with traditional silicon solar cells, dye-sensitized nanocrystalline solar cells have low cost and easy fabrication, and have become a research hotspot of scholars from all over the world. In the preparation of dye-sensitized nanocrystalline solar cells, one of the key steps is how to sensitize the titanium dioxide film. [0003] There are two main methods for traditionally preparing inorganic semiconductor quantum do...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/28H01M14/00H01G9/20H01G9/042
CPCY02P70/50
Inventor 赵高凌任潇潇臧金鑫吴韡韩高荣
Owner ZHEJIANG UNIV
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