Photoelectron characteristic detecting method for thin-layer microcrystal medium material and device thereof

Abstract

This invention relates to one film transistor medium material photo electron property test method and device, which comprises the following scheme: micro source giving out two paths of micro wave with one for reference signal and other for detection signals into microwave vibration chamber; using laser to light microwave resonance chamber dielectric materials; reflecting detection signals from the chamber into two balance frequency mixture devices; the device makes use of the mixture of the signals by use of phase sensitive technique to isolate micro wave absorptive signals and diffusion signals converted into voltage change; outputting voltage change into computer to get freedom and beam signal range attuning curve.

Description

technical field [0001] The invention relates to a detection method of a dielectric material and a device for realizing the method, which belong to the technical field of measurement. Background technique [0002] The microcrystals in silver halide photosensitive thin-layer materials and zinc sulfide and zinc oxide light-emitting medium thin-layer materials of interest in general applications all have a semiconductor structure. After being excited by light, the photoelectrons in the crystal valence band transition to the conduction band for near-free motion. In the process of movement, it may combine with the traps on the material crystal surface to record optical information, or release a certain amount of energy to relax into the energy storage level in the forbidden band of the crystal, and then return to the valence band in the form of optical radiation after a period of time. Achieve afterglow glow. The movement law of photogenerated carriers is the main factor determin...

AI Technical Summary

Problems solved by technology

The non-contact method can be used to measure the transient behavior of photogenerated carriers in thin-layer dielectric materials in dispersed systems, but the current existing technology is still not enough to study photosensitivity and luminescence in terms of measurement sensitivity and time resolution. The requirements of the material carrier behavior cannot capture the time signal of the rapid change of photo-generated carriers (ns level), especially the behavior of different photo-generated carriers-free and shallow bound photoelectrons cannot be distinguished, and the detection of two kinds of current carriers Sub-behavior is extremely important for understanding the conditions and roles of different electron traps in crystals

Moreover, none of the instruments that have been reported at home and abroad based on the principle of the non-contact method are designed to be used in light-generating current-carrying materials such as silver halide photosensitive thin-layer microcrystalline materials and light-emitting thin-layer microcrystalline dielectric materials such as zinc sulfide and zinc oxide. Detection Aspects of Subdynamic Behavior

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