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Method for preparing carbon nano-tube coextruded film on single-crystal silicon slice surface

A technology of carbon nanotube composite and single crystal silicon wafer, which is applied to the device for coating liquid on the surface, the plating of superimposed layers, and the coating process of metal materials, etc., which can solve the problem of long heat treatment time and self-assembled thin film process conditions It is cumbersome and does not involve the improvement and research of carbon nanotube film performance, and achieves the effect of low cost, simple configuration and good anti-wear performance

Inactive Publication Date: 2007-08-08
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process conditions of the self-assembled film prepared by this method are relatively cumbersome, and the heat treatment time is also long, and it does not involve the improvement and research of carbon nanotubes on the properties of the film.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Carbon nanotubes: Multi-walled carbon nanotubes produced by Shenzhen Nanoport Co., Ltd.

[0020] Pre-treat the monocrystalline silicon wafers, soak the monocrystalline silicon wafers in aqua regia, use an electric furnace to heat the aqua regia, heating time is 5 hours, cool naturally at room temperature, take out the monocrystalline silicon wafers, and repeat with deionized water Rinse and place in a drying dish to dry. After drying, soak in Pirahan solution (H 2 SO 4 : H 2 O 2 =70:30, V / V), treat at room temperature for 1 hour, clean with deionized water ultrasonically, place it in a dustproof device and dry in an oven, and then immerse the processed monocrystalline silicon wafer in the prepared mercaptosilane In the solution, let stand for 6 hours, the molar concentration of the mercaptosilane solution is: 3-mercaptopropylmethyldimethoxysilane 0.5mmol / L, the solvent is benzene solution; after taking it out, use chloroform, acetone, deionized After rinsing with water to r...

Embodiment 2

[0026] Carbon nanotubes: Single-walled carbon nanotubes, double-walled carbon nanotubes and multi-walled carbon nanotubes produced by Shenzhen Nanoport Co., Ltd.

[0027] Pre-treat the monocrystalline silicon wafers, soak the monocrystalline silicon wafers in aqua regia, use an electric furnace to heat the aqua regia, heating time is 6 hours, cool naturally at room temperature, take out the monocrystalline silicon wafers, repeat with deionized water Rinse and place in a drying dish to dry. After drying, soak in Pirahan solution (H 2 SO 4 : H 2 O 2 =70:30, V / V), treat at room temperature for 1 hour, ultrasonically clean with deionized water, place it in a dustproof device and dry in an oven, and then immerse the processed monocrystalline silicon wafer in the prepared mercaptosilane In the solution, let stand for 8 hours, the molar concentration of the mercaptosilane solution is: 3-mercaptopropylmethyldimethoxysilane 0.1mmol / L, the solvent is benzene solution; after taking it out, u...

Embodiment 3

[0032] Carbon nanotubes: Single-walled carbon nanotubes, double-walled carbon nanotubes and multi-walled carbon nanotubes produced by Shenzhen Nanoport Co., Ltd.

[0033] Pre-treat the monocrystalline silicon wafers, soak the monocrystalline silicon wafers in aqua regia, use an electric furnace to heat the aqua regia, heating time is 5 hours, cool naturally at room temperature, take out the monocrystalline silicon wafers, and repeat with deionized water Rinse and place in a drying dish to dry. After drying, soak in Pirahan solution (H 2 SO 4 : H 2 O 2 =70:30, V / V), treat at room temperature for 1 hour, ultrasonically clean with deionized water, place it in a dustproof device and dry in an oven, and then immerse the processed monocrystalline silicon wafer in the prepared mercaptosilane In the solution, let stand for 7 hours, the molar concentration of the mercaptosilane solution is: 3-mercaptopropyltrimethoxysilane 1.0mmol / L, the solvent is benzene solution; after taking it out, ri...

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PUM

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Abstract

The invention discloses a making method of composite film of carbon nanometer pipe on the surface of single-crystal silicon chip, which comprises the following steps: immersing base in the chloroazotic acid to heat 5-6h; washing through deionized water; placing in the hydroxylating solution; disposing for 1h under indoor temperature; cleaning; drying; immersing in the mercapto silane solution; stewing 6-8h; blowing through nitrogen; oxidizing mercapto into sulfonic group; placing base in the suspension of modified carbon nanometer pipe; stewing 2-24h under 20-60 deg.c for 2-24h; washing; drying through nitrogen; obtaining the product.

Description

Technical field [0001] The invention relates to a method for preparing a carbon nanotube composite film, in particular to a method for preparing a sulfonic silane-rare earth modified carbon nanotube composite film on the surface of a single crystal silicon wafer. It belongs to the field of film preparation. Background technique [0002] With the advancement of high technology, the machinery manufacturing industry is developing in the direction of miniaturization, which involves the tribology of the surface of the micromachine. Because silicon materials have the advantages of high hardness, low cost, and small surface roughness, their applications in micro-electromechanical systems have received increasing attention. However, silicon materials without surface treatment are more brittle, and surface cracks are prone to peeling wear and brittle fracture under low tensile stress, which are difficult to meet the requirements of use. Therefore, surface modification technology is needed...

Claims

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Application Information

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IPC IPC(8): C23C28/00B05D7/24B05D1/18C23C22/48
Inventor 程先华亓永李键顾勤林
Owner SHANGHAI JIAO TONG UNIV
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