Current-transfer enhanced window layer and LED with the high reflection graph shift substrate structure

Abstract

The LBD of current transmission reflection reducing window layer and high reflecting graph transfer underlay configuration belongs to field of semiconductor photoelectron technique. It includes upper electrode (100), current transmission reflection reducing window layer (111) which comprises conducting reflection reducing light layer (130), current barrier layer (110) and current expansion layer (201), upper limit layer (300), source area (500), lower limit layer (400), graphic current expansion layer (202), conducting high glisten layer (140), conducting linkage layer (150) and transfer underlay (160) or rack constructed by the upper current expansion layer (200), conducting linkage layer (150), conducting high glisten layer (140) and graphic transfer underlay (161), lower electrode (800). The invention increases the current expansion and light output, and can increase the light efficiency greatly, it can realize the high efficiency, high brightness LED lightening; the heat property and reliability are high.

Description

technical field [0001] The invention relates to a light emitting diode (light emitting diode, LED), specifically a new type of light emitting diode with an anti-reflection window layer for current transport and a high reflection pattern transfer substrate, and belongs to the technical field of semiconductor optoelectronics. Background technique [0002] At present, as a new type of light source, high-brightness visible light LEDs have a huge application market in the fields of automobile lights, outdoor displays, landscape lighting, and optical information processing. After the 1990s, the research and development of AlGaInP and GaN materials made LED develop from low brightness to high brightness and even ultra-high brightness, and the wavelength band covers all visible light regions. An important task to improve the luminous intensity of LED is to improve the luminous efficiency, including internal quantum efficiency and external quantum efficiency, although various epitaxi...

AI Technical Summary

Problems solved by technology

For example, to address the problem of absorbing substrates, someone grows a distributed Bragg (DBR) reflective layer 900 between the buffer layer and the lower confinement layer shown in Figure 1, which has a good reflection effect on photons with an incident angle close to 0 degrees , the device structure is shown in Figure 2; for the large difference between the refractive index of the LED body material and the air refractive index, the method proposed by people is to make a layer of anti-reflection film 120 on the light-emitting surface of the LED, and the external quantum efficiency of the device can be increased. About 30-40%, as shown in Figure 3; finally, regarding the problem of high current density directly under the upper electrode, someone abroad has proposed a method of making the current blocking layer 110, such as: using ion implantation, p-n junction secondary epitaxy, etc. The method effectively increases the expansion of the current to the surrounding electrodes, but the process is complicated and the cost is high. The device structure is shown in Figure 4

The devices with the structures shown in Figures 2, 3, and 4 only solve a problem of ordinary LEDs. The light extraction efficiency is still not high, and the process is even complicated. The application of LEDs is limited to a certain extent.

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