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Silicon containing 193nm negative photo resist and membrane forming resin

A film-forming resin, CH3 technology, applied in the direction of optics, optomechanical equipment, photosensitive materials for optomechanical equipment, etc., can solve the problems of wide range of positive photoresists, poor use, difficulties, etc.

Inactive Publication Date: 2010-02-17
苏州市成技新材料开发有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the actual photolithography process, since the exposed area of ​​the negative photoresist is insoluble in the developer solution due to chemical reactions such as crosslinking under the action of light to form patterns, these patterns must be removed after the process is completed, but Generally more difficult and therefore not as widely used as positive photoresists

Method used

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  • Silicon containing 193nm negative photo resist and membrane forming resin
  • Silicon containing 193nm negative photo resist and membrane forming resin
  • Silicon containing 193nm negative photo resist and membrane forming resin

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0143] A copolymer film-forming resin containing a silicon coupling agent is prepared from the following comonomers and their contents in the presence of a free radical initiator, and is prepared by heating for copolymerization. The chemical formula (not representing sequence structure) of copolymer film-forming resin is as follows:

[0144]

[0145] 2-hydroxyethoxyhexafluoroisobutyl-5-norbornene 98.2 grams;

[0146] Methacrylate - (5-norbornanyl-2-formyl) ester 33.5 grams;

[0147] Propyltrimethoxysilyl methacrylate 12.5 grams;

[0148] The preparation method is: in a 1000ml three-neck flask equipped with an electric stirrer, condenser, thermometer, temperature controller, heating mantle and nitrogen inlet, add 2-hydroxyethoxyhexafluoroisobutyl-5-norbornene 98.2 grams, 33.5 grams of methacrylic acid-(5-norbornanyl-2-formyl) ester, 12.5 grams of propyltrimethoxysilane methacrylate, 450 grams of tetrahydrofuran, nitrogen gas under stirring for 10 minutes, then heated to A...

Embodiment 2

[0150] A copolymer film-forming resin containing a silicon coupling agent is prepared from the following comonomers and their contents in the presence of a free radical initiator, and is prepared by heating for copolymerization. The chemical formula (not representing sequence structure) of copolymer film-forming resin is as follows:

[0151]

[0152] 5-norbornene-2,3-anhydride 24.6g

[0153] 5-norbornene-2-hydroxyethyl carboxylate 55.2g

[0154] Ethyldimethoxymethylsilyl methacrylate 9.5g

[0155] The preparation method is: in a 1000ml three-neck flask equipped with an electric stirrer, condenser, thermometer, temperature controller, heating mantle and nitrogen inlet, add 24.6 grams of 5-norbornene-2,3-acid anhydride, 5- 55.2 grams of hydroxyethyl norbornene-2-carboxylate, 9.5 grams of ethyl dimethoxymethylsilyl methacrylate, 400 grams of tetrahydrofuran, nitrogen for 10 minutes while stirring, then heated to 60-70 ° C, added A solution of 4.5 grams of azobisisobutyronit...

Embodiment 3

[0157] A copolymer film-forming resin containing a silicon coupling agent is prepared from the following comonomers and their contents in the presence of a free radical initiator, and is prepared by heating for copolymerization. The chemical formula (not representing sequence structure) of copolymer film-forming resin is as follows:

[0158]

[0159] 96.5 grams of methacrylate (5-norbornanyl-5-formic acid glycidyl) ester;

[0160] Methacrylic acid (tetracyclo[2,2,1,0 5，10 ] dodecyl-8-hydroxyl) ester 26.5 grams;

[0161] Propyldimethoxyethylsilyl methacrylate 12.5 grams;

[0162] The preparation method is: in a 1000ml three-neck flask equipped with an electric stirrer, condenser, thermometer, temperature controller, heating mantle and nitrogen inlet, add methacrylic acid (5-norbornanyl-5-glycidyl formate) ) ester 96.5 grams, methacrylic acid (tetracyclo[2,2,1,0 5，10 ] 26.5 grams of dodecyl-8-hydroxyl) ester, 12.5 grams of propyl dimethoxyethyl silyl methacrylate, 450 gra...

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Abstract

The invention relates to a silicon-containing 193 nm photoetching glue and the film forming resin thereof, adding copolymerizable organic silicon-containing acrylate coupling agent monomers in a filmforming risin formula and copolymerizing the coupling agent monomers with cross-linkable basic soluble group monomers to prepare a new film forming resin. The photoetching glue is composed of the newfilm forming resin, photo acid, cross-linking agent, solvent and other additives, and by the action of the silicon-containing acrylate coupling agent cells, the adhesive property between the photoetching glue and silicon wafer is intensified. Besides, the anti-dry etching property is improved. Further, in the photoetching course of photoetching glue film on the silicon wafer, in exposure region, Si-OH and Si-OR groups in the silicon-containing acrylate coupling agent will take part in cross-linking reaction of the cross-link agent under the action of the photo acid, further reducing solubilityof the glue film in developer. Thus, it adds contrast between exposure and non-exposure regions to form a clearer photoetched pattern.

Description

technical field [0001] The present invention relates to a copolymer film-forming resin (also known as "film-forming agent") containing organic silicon coupling agent and a deep laser for exposure light source with ArF laser (193nm) prepared by using this film-forming resin UV negative chemically amplified photoresist composition. Background technique [0002] Photoresists are key functional materials for photolithography processes in the large-scale integrated circuit industry. Among them, the film-forming resin is an important part of the photoresist, and its chemical and physical properties directly affect the use effect of the photoresist in the large-scale integrated circuit industry. [0003] According to different photolithography processes, photoresist is divided into two categories: positive photoresist and negative photoresist. The so-called positive photoresist means that on the photoresist film during the photolithography process, the exposed part of the pattern...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/038G03F7/027G03F7/004
Inventor 冉瑞成沈吉庄学军
Owner 苏州市成技新材料开发有限公司
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