Double-fin type channel double-grid multifunction field effect transistor and producing method thereof
A field effect transistor and multifunctional technology, applied in the field of metal oxide semiconductor field effect transistors, can solve problems affecting the DC characteristics and reliability of devices, long programming/erasing time, affecting device reliability, etc., to improve programming/erasing Erasing speed, improvement of DC characteristics and reliability, effect of improving reliability
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[0064] The dual-fin channel dual-gate multifunctional field effect transistor provided by the present invention and its preparation method will be described in detail below in conjunction with the accompanying drawings, but this does not constitute a limitation to the present invention.
[0065] like image 3 Shown in (a)-(c) are the double-fin-type channel double-gate multifunctional field effect transistor of this embodiment. The device is based on a bulk silicon substrate. like image 3 (a) shows the layout of the device, M1 memory version, M2 active area version, M3 gate version, and the dark position is the double fin channel. like image 3 (b) and (c) are the cross-sectional structures of the device along the vertical direction of the channel (A1A2 direction) and along the channel direction (B1B2 direction), respectively. From the cross-sectional structure along the vertical direction of the channel, the field effect transistor is based on a bulk silicon substrate 30...
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