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Diamond cone and its making process

A diamond cone and diamond technology, which is applied in the field of diamond cone tip materials and its production, can solve the problems of inability to obtain electrical information and shape information, diamond tip is not wear-resistant, and has little potential for mechanical application, so as to achieve excellent electrical and The effects of mechanical properties, controllable hardness, and stable electrical conductivity

Inactive Publication Date: 2009-06-24
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The object of the present invention is to: not only overcome the defects that the existing diamond tip manufactured by the diamond film attachment method is not resistant to wear, easy to fall off and easy to lose electrical properties, but also overcome the existing bulk diamond tip that has too high a length-to-diameter ratio. Small, large radius of curvature, but can not obtain complete electrical information and morphology information as a probe, and has little application potential in mechanics; thus providing a controllable aspect ratio and controllable shape , and has a small tip curvature radius, and can be used not only for field emission devices, but also for scanning probe systems to obtain complete electrical information and accurate shape information, as well as diamonds for nanoimprinting, microtools, etc. Cone tip and its production method

Method used

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  • Diamond cone and its making process

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Experimental program
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Effect test

Embodiment 1

[0048] The specific structure of the diamond cone tip of the present embodiment refers to the attached Figure 5 (a); The diamond tip has an aspect ratio of 5, a tip curvature radius of 100 nanometers, and a bottom diameter of 4 microns.

[0049] refer to Figure 4 a-4f, the method of the present invention is described in detail according to its flow chart.

[0050] 1. On the surface of the single crystal silicon substrate 2, use a glue leveler to spin and coat a layer of PMMA photoresist with a thickness of about 200-300 nanometers as the protective material layer 1 with a concentration of 5%. The coating conditions are: rotating speed 4000 rpm, spin coating time is 1 minute;

[0051] 2. Put the silicon substrate 2 coated with the protective material layer 1 into the cavity of the focused ion beam system, and use the ion beam to etch a conical hole 3 with a diameter of 4 microns and a depth of 20 microns on the silicon wafer , that is, to obtain the silicon template 9; the...

Embodiment 2

[0056] The specific structure of the planar diamond tip of the present embodiment can be found in Figure 5 (b): The diamond cone tip has an aspect ratio of 6.75, a tip curvature radius of about 100 nanometers, and a bottom diameter of 2 microns.

[0057] refer to Figure 4 a-4f, the difference between this embodiment and embodiment 1 is that the gas-assisted ion beam etching technology is used to etch a conical hole 3 with a diameter of 2 microns and a depth of 13.5 microns to obtain a silicon template 9 . The etching process parameters: ion source voltage (30KV), ion beam current (1nA), beam spot spacing (50% of the beam spot diameter), and beam current residence time (1 microsecond) were not changed. All the other conditions are with embodiment 1. The diamond tip ( Figure 5 (b)) The upper part is conical, and there is an obvious step in the middle part, which is beneficial to the improvement of the overall strength. When the diameter of the etched hole is greater than...

Embodiment 3

[0059] The specific structure of the diamond cone tip of the present embodiment refers to the attached Figure 5 (c), the diamond cone tip has an aspect ratio of 7.7, a tip curvature radius of 30 nanometers, and a bottom diameter of 1 micron.

[0060] refer to Figure 4 a-4f, the difference between the method of the diamond tip made in the present embodiment and the embodiment 1 is that the gas-assisted ion beam is used in the present embodiment to etch a conical hole 3 with a diameter of 1 micron and a depth of 7.7 microns, i.e. Silicon template 9 was obtained. Etching process parameters: ion source voltage (30KV), ion beam current (3nA), beam spot spacing (150% of beam spot diameter), and beam current residence time (0.2 microseconds) have all been changed. The diamond tip ( Figure 5 (c)) In addition to having a large base, the top is tapered and conical. When the diameter of the etched hole is greater than 1 micron, its relative shape does not change with the diameter o...

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Abstract

The invention relates to a diamond cone tip and a preparation method thereof. The diamond cone tip is an integral structure completely composed of diamond, has an aspect ratio between 2-8, a bottom diameter of 100 nanometers to tens of microns, and a tip curvature radius of less than 50 nm. The preparation method comprises: taking a silicon substrate and coating a layer of protective material on it; using focused ion beam etching technology to etch a silicon template for making a corresponding conical hole at the diamond tip; Using an etchant to completely clean and dissolve the protective material layer on the silicon template with conical holes in step 2); grow the diamond film by the traditional method, as long as the grown diamond film is a continuous film, the diamond cone tip can be obtained. The diamond tip has wear resistance, high hardness, and controllable shape, making it an ideal structure for use in field emission devices, scanning probe systems, and in the fields of nanoimprinting and microtooling. Compared with the existing methods for making diamond tips, the method has the advantages of simple manufacturing process, high efficiency and mass production.

Description

technical field [0001] The present invention relates to a diamond tip material and a manufacturing method thereof, in particular to a diamond tip material which not only has a high aspect ratio and a small tip curvature radius, but also has a controllable aspect ratio and a controllable shape. Devices, scanning probe systems, nano-imprinting and micro-tools all have diamond cone tips and manufacturing methods with great application prospects. Background technique [0002] There are roughly three existing techniques for making diamond tips: growing diamond thin films on the tips; ion etching of diamond films; template method to make pyramid-shaped diamond tips. Now three kinds of existing techniques for making diamond tips are specifically described as follows: [0003] 1. Diamond tips made by growing diamond films on spikes: see Reference 1, "The fabrication of diamond tips by the microwave plasma chemical vapor deposition technique" (fabrication of diamond tips by the micr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27G03F7/00C23G1/00C23C16/50C23C16/513C23C16/458
Inventor 王宗利顾长志李俊杰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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