Atoll static release device
A technology of static electricity and resistance area, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of chip damage, weak anti-reverse bias electrostatic damage ability, etc., so as to increase manufacturing cost and enhance anti-reverse bias electrostatic damage. , Enhance the effect of anti-reverse bias electrostatic damage ability
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[0014] The atoll-type electrostatic discharge device (refer to image 3 and Figure 4 ), including P-type metal layer 1, light-receiving region 2, resistance-reducing region 21, dielectric layer 3, N - Type semiconductor layer 4, P type semiconductor region 41, i type light absorbing layer 5, N type buffer layer 6, N type substrate 7, N type metal layer 8, be provided with P type metal layer 1 around the photodetector chip, reduce The resistance area 21, the P-type semiconductor area 41, and the atoll-type electrostatic discharge method that cooperates with the chip's ability to resist reverse bias electrostatic damage, so as to avoid damage to the chip due to static electricity, wherein:
[0015] P-type metal layer 1, refers to the reverse bias negative static charge connected to the uppermost metal layer, in the crystal A dumbbell shape is formed in the middle of the surface and the periphery of the chip is formed. The dumbbell shape is formed by connecting two circles. T...
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