Atoll static release device for enhancing voltage deviation and static damage resistance of enhanced light checker crystal particle

Abstract

The invention discloses an atoll type electrostatic discharge device for improving the back bias electrostatic damage resistance capability of light tester grains and increasing the electrostatic charge release patches to improve the grain back bias electrostatic damage resistance capability. The electrostatic release paths increased around the light tester grain are a P type metal layer, a resistance reduction area, a P type semiconductor area, an i type light absorption layer, a N type buffering layer, a N type base plate and a N type metal layer. Leading most of the electrostatic charges to release around the grains can avoid most of the electrostatic charges centered among and through the grains and cause grain damage and improve the grain back bias electrostatic damage resistance capability.

Description

technical field [0001] The invention relates to an atoll-type electrostatic discharge device that enhances the anti-bias electrostatic damage ability of the photodetector crystal grain. A P-type metal layer, a resistance-reducing region, and a P-type semiconductor region are arranged around the photodetector crystal grain. Distribute most of the static electricity around the photodetector grain and release it, so as to avoid most of the static electricity concentrated in the middle of the grain and penetrate through it, so as to enhance the anti-static damage effect of the grain, and the photodetector grain The steps of the manufacturing process are not changed, so the manufacturing cost will not be increased, which is fully in line with industrial applicability. Background technique [0002] Press, the die of the conventional photodetector (see figure 1 and figure 2 ), the grain is mainly composed of P-type metal layer 1, light-receiving region 2, dielectric layer 3, N ...

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Problems solved by technology

[0002] Press, the die of the conventional photodetector (see figure 1 and figure 2 ), the grain is mainly composed of P-type metal layer 1, light-receiving region 2, dielectric layer 3, N - Type semiconductor layer 4, P-type semiconductor region 41, i-type light absorbing layer 5, N-type buffer layer 6, N-type substrate 7, and N-type metal layer 8: Among them, when there is a large amount of static electricity on the surface of the grain, a large amount of static electricity Penetrating through the middle area of ​​the crystal grain will cause damage to the grain. Applying reverse bias static electricity to simulate a large amount of static electricity penetrating the grain, and applying negative electrostatic charge to the uppermost P-type metal layer 1 and the grounded bottom N-type metal layer 8. At this time In the state of reverse bias, the negative static charge can only be concentrated in the middle area of ​​the grain and released, so that a large amount of negative static electricity penetrates the middle area of ​​the grain, causing damage to the grain, so the ability to resist reverse bias electrostatic damage is not strong

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