Oxygen silicon base doped nitride film yellow green wave band LED and its preparing method

Abstract

For oxygen-doped silicon-based nitride film yellow-green band light-emitting diodes, a-SiNX film is deposited on a P-type single crystal silicon wafer or ITO glass substrate with a resistivity of 4-20Ωcm, and the film thickness is between 40-100nm. The a-SiNX film is then plated with a thin film metal electrode; the back of the P-type monocrystalline silicon wafer is plated with another electrode, and the ITO itself constitutes the other electrode. For silicon-based light-emitting devices with ITO as the anode, a 1 μm thick metal aluminum (Al) film is directly evaporated on the active layer as the cathode. The Al electrode is a round spot with a diameter of 3 mm, with ITO as the anode at one end. is the light exit end.

Description

1. Technical field: [0001] The invention relates to a photoluminescent device and a preparation method. In particular, a novel oxygen-doped silicon nitride thin-film light-emitting diode is proposed from two aspects of light-emitting mechanism and preparation and implementation process. The active layer of the light-emitting device is an oxygen-doped silicon-based nitride film. The material preparation technology is a combination of low-temperature plasma enhanced chemical vapor deposition (PECVD) technology and plasma oxidation technology. 2. Background technology: [0002] Semiconductor silicon (Si) is currently the most important material for preparing microelectronic devices, and the rapid development of modern microelectronic technology is based on silicon materials. The integration of nanoelectronics and optoelectronics based on semiconductor silicon-based materials is the core of the new generation of semiconductor devices in the 21st century and the hardware foundat...

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Problems solved by technology

[0005] Usually PECVD technology is used at conventional temperature (300°C) to SiH 4 and NO 2 Oxygen-containing a-SiN grown as a gas source x The thin film can realize photoluminescence at room temperature, but the light-emitting device using it as the active layer cannot realize electroluminescence at room temperature. It can only be realized after thermal annealing at 950°C, and the luminescence is weak and the working current density is high. See [5] K. J. Price, et al. J. Appl. Phys. 86 2638 (1999)

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