Production of hafnium nitride thin-membrane materials from ion beam epitaxial growth apparatus

Abstract

A method of producing hafnium nitride(HfN) thin-film material by ion beam epitaxy growing equipment. The process includes selecting hafnium tetrachloride (ZrCl4) powder andnitrogen(N2) as the materials of producing low-energy isotope Hf+ ion beam and N+ ion beam ,choosing twoion beams epitaxy growing equipment with mass separation function and Energetic-Ions depositing function, accurate controlling dosage and mixture ratio ,ion energy and growth temperature of the ion beams; obtaining hafnium nitride thin-film with high quality growth and low temperature extension in ultrahigh vacuum chamber. It's a practical and economical method for producing hafnium nitride thin-film material in semiconductor domain owing to its convenience in growth controlling and optimizing.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for preparing a hafnium nitride (HfN) film material by using ion beam epitaxy (IBE) growth equipment. Background of the invention [0002] Group IVB refractory metal mononitrogen compounds with sodium chloride (NaCl) structure (B1 type), mainly including titanium nitride (TiN), hafnium nitride (ZrN) and hafnium nitride (HfN), all of which have High melting point, high density, high hardness and bright golden luster, in addition to being a good hard coating and decorative material, it has important applications in cutting tools, spare parts anti-corrosion and anti-wear treatment, decoration, etc., because it also has It has high electrical conductivity, good lattice matching with silicon (Si), and good thermal and chemical stability characteristics. It also has important applications in the field of semiconductor technology, such as silicon-based large-scale integr...

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Problems solved by technology

[0005] The methods currently used to prepare and grow hafnium nitride (HfN) thin films mainly include magnetron sputtering, pulsed laser deposition (PLD), ion beam assisted deposition (IBAD), plasma vapor deposition (PVD), and chemical vapor deposition (CVD). ) and electron beam evaporation, etc., but to prepare and grow hafnium nitride (HfN) thin films suitable for the semiconductor field, the above method still has the following disadvantages: 1) the existing common preparation and growth methods usually have very high requirements on the purity of raw materials High, and high-purity hafnium-containing raw materials are much more expensive than titanium and hafnium-containing raw materials of the same purity

The mass-separated low-energy ion beam epitaxy method has been successful in the growth and preparation of rare earth thin film materials, but there is still little research on how to use this method to grow the transition group IVB refractory metal nitrides with high melting point and difficult to purify. to report

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