Method for manufacturing magnetosensitive device with giant magnetic impedance effect based on microelectrochenical system
A micro-electro-mechanical system and giant magneto-impedance technology, applied in the field of sensors, can solve the problems of fragile wires and thin strips, welding of wires and thin strips, difficulty in installation, etc., and achieve the effects of improved sensitivity, good repeatability, and low cost
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[0029] Below in conjunction with embodiment further description.
[0030] Preparation method of the present invention, specifically:
[0031] (1) The double-sided oxidized silicon wafer substrate that has been cleaned and treated (ie, the A side and the B side) is positively resisted, the thickness of the photoresist is 5 μm, the drying temperature of the photoresist is 95 ° C, and the time is 30 minutes. ; After exposure and development on one side (side B), use BHF etching solution to etch the silicon dioxide at a temperature of 40°C, and then remove the photoresist to obtain the double-sided overlay alignment marks on the B side;
[0032] (2) Carry out the magnetic sensitive device preparation process on the other side of the silicon wafer (referred to as the A side), and the following are all carried out on the A side;
[0033] (3) Sputtering FeNi bottom layer, thickness 80-100nm;
[0034] (4) Shake the positive resist, the thickness of the photoresist is 15 μm, the phot...
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