Substrate processing apparatus

Abstract

A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]This invention relates to a substrate processing apparatus and a substrate processing method for processing substrates. Examples of substrates to be processed include semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.[0003]2. Description of Related Art[0004]A substrate, such as a semiconductor wafer or a glass substrate for a liquid crystal display device, is processed by use of a processing liquid in a production process in which a semiconductor device, a liquid crystal display device, or the like is produced.[0005]For example, Japanese Published Unexamined Patent Application No. 2007-318016 discloses a substrate processing apparatus of the single-substrat...

AI Technical Summary

Benefits of technology

The patent text describes a substrate processing method that uses a chemical solution containing an etching component and a thickening agent. The chemical solution is supplied to the substrate and then transferred to another location on the substrate. This allows the substrate to hold the chemical solution and maintain its viscosity even if the chemical solution is no longer being supplied. The thickening agent increases the viscosity of the chemical solution, reducing its flowability. The method also helps to lift off foreign particles and remove them from the substrate using the etching component. The substrate processing method can effectively remove foreign particles and promote a reaction between the substrate and the chemical solution. The thickening agent used in the method includes methylcellulose, carboxymethyl cellulose, polyethylene glycol, sodium polyacrylate, and polyvinyl alcohol.

Problems solved by technology

However, the consumption of the chemical solution will be increased if the chemical solution continues being discharged from the nozzle.

However, in this cleaning method, foreign matters cannot be sometimes removed from the substrate if adhesion of the foreign matters to the upper surface of the substrate is extremely firm.

However, in this method, the chemical solution contiguous to the substrate is not replaced by a new chemical solution, and therefore there is a case in which much time is consumed to allow the substrate and the chemical solution to sufficiently react together, and hence a satisfactory processing speed cannot be secured.

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