Stamper for transferring fine pattern and method for manufacturing thereof

Abstract

An object of the present invention is to provide a stamper for transferring fine pattern and a method for manufacturing the stamper, the stamper has a fine structure layer to improve a continuous transferring property of the resinous stamper, and to allow accurate and continuous transferring. In order to achieve the above object, the present invention provides a stamper for transferring fine pattern, including: a fine structure layer on a supporting substrate, in which the fine structure layer is a polymer of a resinous compound whose principal component is silsesquioxane derivative having a plurality of polymerizable functional groups.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]The present application claims benefit of the filing date of Japanese Patent Application No. 2008-315142 filed on Dec. 11, 2008 which is incorporated herein by reference.FIELD OF THE INVENTION[0002]The present invention relates to a stamper for transferring a fine pattern on a surface of a transferred object by pressing the stamper against the surface, and to a method for manufacturing the stamper.DESCRIPTION OF THE RELATED ART[0003]Conventionally, a photolithography technology is frequently used as the technology for processing a fine pattern needed in semiconductor devices, etc. Because, however, the pattern has been shrunk and a required process dimension has been shrunk as small as a light source wave length which is used for an exposure, it becomes difficult to process the fine pattern by the photolithography technology. For this reason, instead of the photolithography technology, an electron beam lithography apparatus which is a kin...

AI Technical Summary

Problems solved by technology

Because, however, the pattern has been shrunk and a required process dimension has been shrunk as small as a light source wave length which is used for an exposure, it becomes difficult to process the fine pattern by the photolithography technology.

Therefore, there is a disadvantage that an exposure time (drawing time) increases as a number of patterns to be drawn increases.

Accordingly, a long time is required for completing the patterns.

As a result, in proportion to a degree of integration of a semiconductor integrated circuit, a time required for the pattern formation increases, thereby resulting in reduction of a throughput.

However, because a degree of requirement for fine pattern has progressed, there are many factors which raise a fabrication cost, for example, growing in size of the electron beam apparatus and increase in accuracy of mask alignment.

At present, a hard stamper (e.g., quartz, etc.) used in a prior art nanoimprint technology has a disadvantage that the hard stamper can not follow warps and projections of the transferred substrate at the time of transferring, thereby resulting in widespread transferring failure regions.

However, in the prior art stamper, accuracy in the pattern tends to decrease owing to uneven thickness of the applied mold release agent, and the transferring failure occurs owing to degradation of a mold releasing layer caused by repeated transferring.

Images