High Capacity Low Cost Multi-State Magnetic Memory
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[0035]In the following description of the embodiments, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration of the specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized, because structural changes may be made without departing from the scope of the present invention.
[0036]In an embodiment of the present invention, a multi-state magnetic memory cell is disclosed. A stack of magnetic tunnel junctions (MTJs) are formed, with each MTJ of the stack formed of a fixed layer, a barrier layer, and a free layer. The fixed layer's magnetic polarity is static, or “fixed,” by an adjacent “pinning layer;” while the free layer's magnetic polarity can be switched between two states by passing an electrical current through the MTJ. Depending on the magnetic polarity, or state, of the free layer relative to the fixed layer, the MTJ is either in a ‘0’ or a ‘1’ state.
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