Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Process and apparatus for organic vapor jet deposition

Active Publication Date: 2008-09-25
THE TRUSTEES FOR PRINCETON UNIV
View PDF13 Cites 527 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0015]An embodiment of the present invention further provides that under the appropriate conditions of substrate temperature, reactor pressure, and nozzle geometry, an array of sharp-edged pixels with a resolution of about 1 μm is achievable with jet deposition if the nozzle-substrate separation, s, is within the molecular mean free path of the carrier gas, A. In addition, because of the unidirectional flow, use of a heavier carrier gas can provide better directionality of deposition and subsequently sharper pixels.
[0016]One advantage of certain embodiments of the present invention is that material waste is minimized due to the heating of the nozzle and the directional flow. For example, the nozzle may be heated to a temperature sufficient to avoid physisorbtion (condensation) of organic material on nozzle surfaces, thereby reducing waste, and also reducing the need to clean the nozzle. The substrate may be cooled to enhance deposition characteristics, and avoid a situation where the carrier gas heats the substrate to the point that organic material will not deposit. Another advantage is the absence of the masking step, resulting in an increased rate of production, a more compact deposition apparatus design, and the elimination of contamination from a shadow mask. In high-resolution deposition requiring a separation distance s typically less than 1 mm, contamination from a shadow mask using OVPD is especially problematic. An additional problem arises in maintaining that small mask-substrate separation over a large substrate area, particularly since the mask would normally be thin and flexible.
[0017]Another advantage of certain embodiments of the present invention is that the process may be used in manufacturing full-color organic light emitting diode (“OLED”) displays by patterning the multiple color pixels on the same substrate without the need to use a separate shadow mask. The apparatus incorporates an array of nozzles arranged and operated synchronously much like the print-head of an ink-jet printer. Each nozzle may incorporate three source cells, for red, green and blue luminophores, with valve control for sequentially layering the materials, without having to move a shadow mask. For example, each nozzle may be connected to multiple source cells through different valves, such that the deposition from each nozzle may be alternated between different colors at different locations on the substrate. Or, each nozzle may be connected to only one of multiple source cells, where each nozzle has its own valve, or different groups of nozzles may be connected to different sources, with each group having its own valve, such that the nozzle block deposits a predetermined pattern of different organic materials.

Problems solved by technology

However, control of film thickness uniformity and dopant concentrations over large areas needed for manufactured products can be difficult when using vacuum evaporation (see S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era (Lattice, 1986)).
In addition, a considerable fraction of the evaporant coats the cold walls of the deposition chamber.
Over time, inefficient use of materials results in a thick coating which can flake off, leading to particulate contamination of the system and substrate.
The potential throughput for vacuum evaporated organic thin film devices is low, resulting in high production costs.
Though these examples demonstrate that OVPD has certain advantages over VTE in the deposition of organic films, especially over large substrate areas, the prior art has not addressed the special problems that arise when depositing an array of organic material.
However, despite the overall advantages of OVPD in depositing organic layers, the use of the shadow mask in OVPD has certain disadvantages including: significant lateral dispersion compared to VTE; material waste; potential for dust contamination on the film from the mask; and difficulty in controlling the mask-substrate separation for large area applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process and apparatus for organic vapor jet deposition
  • Process and apparatus for organic vapor jet deposition
  • Process and apparatus for organic vapor jet deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039]Embodiments of the present invention are directed to a process of patterned deposition of organic materials onto substrates utilizing the vapor transport mechanisms of organic vapor phase deposition, and to an apparatus for performing this process of patterned deposition. In one embodiment, the process comprises: transporting organic vapors via an inert carrier gas moving at a flowrate V from a source cell, through a timed valve, and into a nozzle block, wherein the transport occurs at low pressure P; ejecting the organic vapors from the nozzle block onto a cooled substrate via the inert carrier gas moving at a flowrate V; and laterally translating the cooled substrate, which is maintained at a distance s from the ejection end of the nozzle block, at a rate v. The rate of translation is synchronized with the timed valve to create the desired patterned deposition of organic materials.

[0040]FIG. 1 shows a vacuum thermal evaporation (VTE) system 100. A source 110 is heated such t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Lengthaaaaaaaaaa
Lengthaaaaaaaaaa
Login to View More

Abstract

A method of fabricating an organic film is provided. A non-reactive carrier gas is used to transport an organic vapor. The organic vapor is ejected through a nozzle block onto a cooled substrate, to form a patterned organic film. A device for carrying out the method is also provided. The device includes a source of organic vapors, a source of carrier gas and a vacuum chamber. A heated nozzle block attached to the source of organic vapors and the source of carrier gas has at least one nozzle adapted to eject carrier gas and organic vapors onto a cooled substrate disposed within the vacuum chamber.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This patent application claims priority benefits to the following U.S. patent applications: 60,317,215 (filed Sep. 4, 2601), 60 / 316,264 (filed on Sep. 4, 2001), 60 / 316,968 (filed on Sep. 5, 2001), and 60 / 332,090 (filed Nov. 21, 2001). These patent applications are incorporated by reference in their entireties. This patent application is related to simultaneously filed patent application Ser. No. ______, attorney docket no. 10020 / 21904, which is incorporated by reference in its entirety.STATEMENT REGARDING GOVERNMENT RIGHTS[0002]This invention was made with Government support under Contract No. F49620-92-J-05 24 (Princeton University), awarded by the U.S. Air Force OSR (Office of Scientific Research). The Government has certain rights in this invention.FIELD OF THE INVENTION[0003]The present invention is directed to a process of patterned deposition of organic materials onto substrates which utilizes the vapor transport mechanisms of organ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/00
CPCC23C14/24C23C14/12C23C14/228C23C14/04
Inventor SHTEIN, MAXFORREST, STEPHEN R.
Owner THE TRUSTEES FOR PRINCETON UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products