Method For Forming Dielectric Film And Method For Forming Capacitor In Semiconductor Device Using The Same

Abstract

Provided is a method for forming a dielectric film in a semiconductor device, wherein the method can improve a dielectric characteristic and a leakage current characteristic. According to specific embodiments of the present invention, the method for forming a dielectric film includes: forming a zirconium dioxide (ZrO2) layer over a wafer in a predetermined thickness that does not allow continuous formation of the ZrO2 layer; and forming an aluminum oxide (Al2O3) layer over portions of the wafer where the ZrO2 layer is not formed, in a predetermined thickness that does not allow continuous formation of the Al2O3 layer

Description

TECHNICAL FIELD[0001]The present invention relates to a method for forming a dielectric film in a semiconductor device and a method for forming a capacitor using the same; and, more particularly, to a method for forming a dielectric film in a semiconductor device using an atomic layer deposition (ALD) method and a method for forming a capacitor using the same.BACKGROUND ART[0002]Recently, as the design rule of a dynamic random access memory (DRAM) has decreased, a cell region has decreased and an aspect ratio of a storage node in a capacitor has increased greatly. Thus, it has become difficult to secure a dielectric capacity required for each unit cell.[0003]Conventionally, a dielectric film has been formed in oxide / nitride / oxide (ONO) layer structure to secure a dielectric capacity. However, recent researches on forming a dielectric film with an aluminum oxide (Al2O3) layer (ε=9), a hafnium dioxide (HfO2) layer (ε=25), or a stacked layer of HfO2 / Al2O3, wherein the Al2O3 layer and t...

AI Technical Summary

Benefits of technology

[0012]In accordance with specific embodiments of the present invention, a dielectric characteristic and a leakage current characteristic of a capacitor used in a semiconductor device can be improved by forming a dielectric film using a [ZrO2]x[Al2O3]y layer, where x and y each represents 0 or a positive number. Herein, ZrO2 and Al2O3 are evenly mixed in the [ZrO2]x[Al2O3]y layer.

Problems solved by technology

Thus, it has become difficult to secure a dielectric capacity required for each unit cell.

On the contrary, the leakage current characteristic of the entire dielectric film is deteriorated due to the low band gap energy Eg of the HfO2 layer, and the dielectric characteristic of the entire dielectric film is deteriorated due to the low dielectric constant of the Al2O3 layer.

Thus, if the dielectric film is applied in a capacitor of a DRAM device, a large limitation occurs with respect to decreasing a thickness of the dielectric film.

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