Plasma processing apparatus having an evacuating arrangement to evacuate gas from a gas-introducing part of a process chamber

Abstract

A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to plasma processing apparatuses and, more particularly, to a plasma processing apparatus having a gas-introducing part, which introduces a reactant gas into a process chamber. [0003] 2. Description of the Related Art [0004] In recent years, a plasma processing apparatus is used to perform a film deposition process, an etching process or an ashing process in a manufacturing process of semiconductor devices since the semiconductor devices have become more densified and a finer structure. For example, in a typical microwave plasma processing apparatus, a 2.45 GHz microwave is introduced into a process chamber through a slot electrode. An object to be processed such as a semiconductor wafer or an LCD substrate is placed inside the process chamber, which is maintained under a negative pressure environment by a vacuum pump. Additionally, a reactant gas is also introduced into the process cha...

AI Technical Summary

Benefits of technology

The present invention provides an improved plasma processing apparatus that can apply a high-quality plasma process to an object by removing impurities from a gas-introducing part of a process chamber. The apparatus includes a process chamber, a gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber, a gas-evacuating arrangement connected to the gas-introducing part so as to evacuate the reactant gas from the gas-introducing part, and a vacuum pump connected to the process chamber so as to maintain a negative pressure. The gas-evacuating arrangement can be connected to the outlet port of the gas supply ring or the dielectric plate so as to evacuate the remaining reactant gas. The technical effects of the invention include improved plasma processing efficiency, reduced impurity levels, and improved process control.

Problems solved by technology

However, there is a problem in the conventional plasma processing apparatus in that residual impurities such as a water component cannot be completely removed from inside the process chamber.

However, since the gas-introducing part provided to the process chamber has gas-introducing holes (nozzles) each having a very small diameter, a removal speed of the water component remaining inside the gas-introducing part is low.

The water component remaining inside the gas-introducing part may enter and close the gas-introducing holes, which interrupts the introduction of the reactant gas into the process chamber.

Thus, a yield rate of the object to be processed is deteriorated.

Additionally, if some of the gas-introducing holes are closed, this may deteriorate a uniform distribution of the reactant gas in the process chamber, which may result in an uneven degree of processing of the object to be processed.

Further, if the water component in the gas-introducing holes is ejected into the process chamber, the water component acts as an impurity, which deteriorates a high-quality process to be applied to the object to be processed.

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