Etch chamber with dual frequency biasing sources and a single frequency plasma generating source

Abstract

A method and apparatus for selectively controlling a plasma in a processing chamber during wafer processing. The method includes providing process gasses into the chamber over a wafer to be processed, and providing high frequency RF power to a plasma generating element and igniting the process gases into the plasma. Modulated RF power is coupled to a biasing element, and wafer processing is performed according to a particular processing recipe. The apparatus includes a biasing element disposed in the chamber and adapted to support a wafer, and a plasma generating element disposed over the biasing element and wafer. A first power source is coupled to the plasma generating element, and a second power source is coupled to the biasing element. A third power source is coupled to the biasing element, wherein the second and third power sources provide a modulated signal to the biasing element.

Description

CROSS REFERENCE TO RELATED APPLICATION [0001] This patent application is a continuation of U.S. application Ser. No. 10 / 342,575 filed Jan. 14, 2003 by Jin-Yuan Chen, et al. entitled “ETCH CHAMBER WITH DUAL FREQUENCY BIASING SOURCES AND A SINGLE FREQUENCY PLASMA GENERATING SOURCE” and assigned to the present assignee.FIELD OF THE INVENTION [0002] Embodiments of the invention generally relate to semiconductor wafer processing, and more particularly, to etch and plasma related integrated circuit manufacturing processes and related hardware. BACKGROUND OF THE INVENTION [0003] Semiconductor fabrication wafer process chambers employing plasma to perform etching and deposition processes utilize various techniques to control plasma density and acceleration of plasma components. For example, magnetically-enhanced plasma chambers employ magnetic fields to increase the density of charged particles in the plasma, thereby further increasing the rate of plasma-enhanced deposition and etching proc...

AI Technical Summary

Benefits of technology

The present invention provides an etch chamber that uses three RF frequencies to improve plasma control and increase the process window for etching. This allows for better control of plasma density and ion energy, which expands the coverage of etching applications and provides a wider window of processing. The apparatus includes a biasing element and a plasma generating element, and a modulated RF power signal is provided to the biasing element to selectively control the plasma during wafer processing. The technical effect is improved plasma control and a wider range of processing applications.

Problems solved by technology

However, during “deep trench etching”, the wafer may be exposed to the etchants for a long duration.

That is, the deep trench processes are limited by the selectivity between the material of the protective mask and the material to be etched, where the higher the selectivity, the deeper the trench may be etched.

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