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Silicon electrode plate having excellent durability for plasma etching

A plasma and durability technology, applied in the direction of plasma, circuits, electrical components, etc., can solve the problems of wasteful use method, short time, unavoidable, etc., and achieve the effect of reducing the number of replacements

Active Publication Date: 2007-05-16
SUMCO CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, these consumption holes cannot be avoided due to prolonged plasma etching3
In addition, since the generation amount of the consumption hole 3 formed on the silicon electrode plate 1 for plasma etching is uneven in the plane, it is required to maintain the density of the plasma 2 uniformly and to maintain the etching of the wafer 4 more uniformly in recent years. In this way, the time for using a piece of silicon electrode plate 1 for plasma etching is short, and it must be replaced in advance
Moreover, since the replacement silicon electrode plate 1 for plasma etching becomes waste, it becomes a wasteful usage method

Method used

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  • Silicon electrode plate having excellent durability for plasma etching

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Experimental program
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Effect test

Embodiment 1

[0033] Dissolve Si raw material with a purity of 11N, initially dope with B and P, and prepare Si solutions containing B: 1-15ppba and P: 1-10ppba respectively. Using this Si solution, a silicon single crystal having a diameter of 300 mm was produced by the CZ method. This ingot was sliced ​​into wafers with a diamond band saw to a thickness of 8 mm, and then cut to produce a silicon single crystal electrode substrate with a diameter of 290 mm and a thickness of 6 mm.

[0034] On this silicon single crystal electrode substrate, penetrating pores with a diameter of 0.3 mm are formed at intervals of 5 mm, and then the surface processing is removed by immersing the silicon single crystal electrode substrate in a mixed solution of hydrofluoric acid, acetic acid, and nitric acid for 5 minutes. Layer, thus made the silicon electrode plate for plasma etching (hereinafter referred to as the electrode plate of the present invention) 1-14 of the present invention having the contents of ...

Embodiment 2

[0047] Dissolve Si raw material with a purity of 11N, initially dope with B and As, and make Si solutions containing B: 1-15ppba and As: 1-10ppba respectively. Using this Si solution, a silicon single crystal having a diameter of 300 mm was produced by the CZ method. This ingot was sliced ​​into wafers with a diamond band saw to a thickness of 8 mm, and then cut to produce a silicon single crystal electrode substrate with a diameter of 290 mm and a thickness of 6 mm.

[0048] On this silicon single crystal electrode substrate, penetrating pores with a diameter of 0.3 mm are formed at intervals of 5 mm, and then the surface processing is removed by immersing the silicon single crystal electrode substrate in a mixed solution of hydrofluoric acid, acetic acid, and nitric acid for 5 minutes. layer, thus making electrode plates 15-28 of the present invention, comparative electrode plates 3, 4 and electrode plate 3 of the prior art.

[0049] The B and As contents of these electrode...

Embodiment 3

[0061] Dissolve Si raw materials with a purity of 11N, initially dope with B, P and As, and make Si solutions containing B: 1-15ppba and P+As: 1-10ppba respectively. Using this Si solution, a silicon single crystal having a diameter of 300 mm was produced by the CZ method. This ingot was sliced ​​into wafers with a diamond band saw to a thickness of 8 mm, and then cut to produce a silicon single crystal electrode substrate with a diameter of 290 mm and a thickness of 6 mm.

[0062] On this silicon single crystal electrode substrate, penetrating pores with a diameter of 0.3 mm are formed at intervals of 5 mm, and then the surface processing is removed by immersing the silicon single crystal electrode substrate in a mixed solution of hydrofluoric acid, acetic acid, and nitric acid for 5 minutes. Layers, electrode plates 29-33 of the present invention and comparative electrode plates 5 and 6 were produced.

[0063] The contents of B, P, and As in these electrode plates were meas...

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Abstract

The invention provides a silicon electrode plate having excellent durability for plasma etching is provided. The electrode plate is made of a silicon single crystal containing boron by an atomic ratio of 3-11ppba and phosphorus or arsenic or both by an atomic ratio of 0.5-6ppba in total.

Description

technical field [0001] The present invention relates to a silicon electrode plate for plasma etching excellent in durability. [0002] This application claims the priority of Japanese Patent Application No. 2004-108731 filed on April 1, 2004 and Japanese Patent Application No. 2004-234961 filed on August 12, 2004, the contents of which are incorporated herein by reference. Background technique [0003] Generally, when manufacturing a semiconductor integrated circuit, it is necessary to etch an interlayer insulating film formed on a silicon wafer. In order to etch a silicon wafer (hereinafter referred to as a wafer) with this interlayer insulating film, a plasma etching device is used, and silicon is used as an electrode material in this device. As shown in a partial cross-sectional schematic explanatory diagram of FIG. 1 , this silicon electrode plate for plasma etching has a structure in which penetrating fine pores 5 are provided in parallel to the thickness direction of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H05H1/46
Inventor 藤原秀树池泽一浩田口裕章岩元尚文石井利升米久孝志
Owner SUMCO CORP
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