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Dispersion for the chemical-mechanical polishing of metal surfaces containing metal oxide particles and a cationic polymer

A chemical mechanical and metal surface technology, applied in the field of dispersion, can solve the problems of slow metal removal rate, insufficient selectivity, and low dispersion stability

Inactive Publication Date: 2007-03-28
DEGUSSA AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] While these dispersions generally have good selectivity, metal removal rates are too slow
Alternatively, the metal removal rate is adequate but the selectivity is insufficient
Furthermore, dispersions with good removal rates and good selectivity values ​​have low stability, e.g. with respect to settling of abrasives

Method used

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  • Dispersion for the chemical-mechanical polishing of metal surfaces containing metal oxide particles and a cationic polymer
  • Dispersion for the chemical-mechanical polishing of metal surfaces containing metal oxide particles and a cationic polymer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Use Al in embodiment 1 2 o 3 Silicon-aluminum mixed oxide powder with a content of 66% by weight and a BET surface area of ​​90 m2 / g.

[0047] Use Al in embodiment 2 and 3 2 o 3 Silicon-aluminum mixed oxide powder with a content of 90% by weight and a BET surface area of ​​90 m2 / g.

[0048] Example 1:

[0049] 33.5 kg of demineralized water and 500 g of Catiofast(R) PR 8153 (BASF) were placed in a 60 liter stainless steel batch vessel. 5 kg of powder are sucked in and predispersed roughly by means of a dispersing and suction mixer (4500 rpm) supplied by Ystral. After introducing the powder, the dispersion was made using a Ystral Z 66 continuous rotor / stator homogenizer with 4 process rings, a stator slot width of 1 mm and a rotational speed of 11,500 rpm. During the introduction of the powder, the pH was maintained at 4.0 + / - 0.3 by the addition of acetic acid (100% glacial acetic acid). The abrasive concentration was brought to 12.5% ​​by weight by adding furthe...

Embodiment 2

[0050] Example 2 was carried out in the same manner as Example 1.

Embodiment 3

[0051] Example 3 was also carried out in the same manner as Example 1, but without using the cationizing agent Catiofast(R).

[0052] Polishing tools and polishing parameters

[0053] Polisher: MECAPOL E460 (STEAG) with 46 cm platen and 6" wafer holder

[0054] Polishing pad: IC1400 (RODEL Corp); after each wafer polishing, the polishing pad is cleaned with a diamond tip

[0055] Amount of slurry: 120 ml / min for all experiments

[0056] Polishing parameters: p A Operating pressure: 10-125kPa=1.45-18.13psi The default is 45 and 60kPa

[0057] p R Back pressure is 10kPa

[0058] ω p = ω c = 40 rpm (constant for all experiments)

[0059] Sweep = 4 cm (constant for all experiments)

[0060] Polishing time: 2 minutes

[0061] Post-cleaning: After polishing, the wafers were rinsed in deionized water for 30 seconds, then both sides were cleaned in a scrubber unit with nebulizer and megasonic stand, and dried in a centrifugal dryer.

[0062] Starting from the dispersions fr...

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PUM

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Abstract

Aqueous dispersion for the chemical-mechanical polishing of metal surfaces, containing a metal oxide powder and a cationic, surface-active polymer, wherein the metal oxide powder is silicon dioxide, aluminium oxide or a mixed oxide of silicon dioxide and aluminium oxide, and the cationic, surface-active polymer is a polyallyl amine or polydiallyl amine dissolved in the dispersion and having a weightaverage molecular weight of less than 100,000 g / mol. The dispersion can be used for the chemical-mechanical polishing of metallic layers and of metallic films, which are applied to an insulating barrier layer.

Description

technical field [0001] The present application relates to dispersions for chemical mechanical polishing of metal surfaces. Background technique [0002] Methods for fabricating semiconductors typically include a chemical mechanical polishing (CMP) step. [0003] Excess metals such as copper or tungsten are removed in this step. In certain embodiments, the conductive metal is not located directly on the insulating layer, usually composed of silicon dioxide, because of undesired reactions between these layers. To avoid this phenomenon, a barrier layer is applied between the metal and the silicon dioxide layer. The barrier layer may be composed of, for example, titanium nitride (TiN), titanium (Ti), tantalum (Ta), tantalum nitride (TaN), or a combination thereof. This causes the metal layer to adhere to the silicon dioxide layer. In subsequent polishing steps it is important that the abrasive in dispersion form has a high metal selectivity for the barrier layer. [0004] M...

Claims

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Application Information

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IPC IPC(8): C09G1/02C09K3/14H01L21/321
CPCC09G1/02C09K3/1463C01B33/023C01F7/02H01L21/30625
Inventor 沃尔夫冈·洛茨弗兰克·门策尔
Owner DEGUSSA AG
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