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Low temp, sintered bismuth base microwave medium ceramic material and preparation process thereof

A microwave dielectric ceramic and low-temperature sintering technology, applied in ceramics, inorganic insulators, etc., can solve the problems of reducing the size of microwave circuits, and achieve the effects of small dielectric loss, large insulation resistance, and simple chemical composition and preparation process.

Inactive Publication Date: 2006-06-28
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Microwave dielectric resonators made of high dielectric constant microwave materials can greatly reduce the size of microwave circuits, but the way out for further miniaturization lies in the development of MCM

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The chemical raw material Bi 2 o 3 , V 2 o 5 , Nb 2 o 5 According to the formula: Bi(Nb 1-x V x )O 4 , where x=0.002. After preparation, fully mix and ball mill for 4 hours, dry and sieve after grinding, pre-fire in air or nitrogen atmosphere at 700℃~750℃ for 3~4 hours, then pulverize the burnt block, ball mill for the second time, grind and dry Then granulate, and then double-layer sieve with 70-mesh and 120-mesh sieves to obtain the desired ceramic material. After the ceramic material is pressed into shape (sheet or column) as required, it is then sintered into porcelain at 950°C to 980°C in air or nitrogen to obtain a low-temperature sintered bismuth-based microwave dielectric ceramic material.

[0028] The performance of this group of ceramic materials reaches the following indicators:

[0029] Properties of samples sintered in air: temperature coefficient of dielectric constant α ε =0~200ppm / ℃ (at 1MHz), dielectric constant ε=48 (at 1MHz), dielectric los...

Embodiment 2

[0032] The chemical raw material Bi 2 o 3 , V 2 o 5 , Nb 2 o 5 According to the formula: Bi(Nb 1-x V x )O 4 , where x=0.032. After preparation, fully mix and ball mill for 4 hours, dry and sieve after grinding, pre-fire in air atmosphere at 700℃~750℃ for 3~4 hours, then pulverize the sintered block, pass through secondary ball mill, grind and dry Granulate, and then double-layer sieve with 70-mesh and 120-mesh sieves to obtain the desired ceramic material. After the ceramic material is pressed into shape (sheet or column) as required, it is then sintered into porcelain at 830°C to 890°C in an air atmosphere to obtain a low-temperature sintered bismuth-based microwave dielectric ceramic material.

[0033] The performance of this group of ceramic materials reaches the following indicators:

[0034] Dielectric constant temperature coefficient α ε =0~200ppm / ℃ (at 1MHz), dielectric constant ε=46.1 (at 1MHz), dielectric loss tanδ=2×10 -4 (under 1MHz), dielectric properti...

Embodiment 3

[0036] The chemical raw material Bi 2 o 3 , V 2 o 5 , Nb 2 o 5 According to the formula: Bi(Nb 1-x V x )O 4 , where x=0.064. After preparation, fully mix and ball mill for 4 hours, dry and sieve after grinding, pre-fire in air atmosphere at 700℃~750℃ for 3~4 hours, then pulverize the burnt block and ball mill for the second time, grind and dry before Granulate, and then double-layer sieve with 70-mesh and 120-mesh sieves to obtain the desired ceramic material. After the ceramic material is pressed into shape (sheet or column) as required, and then sintered into porcelain at 790°C to 850°C in an air atmosphere, a low-temperature sintered bismuth-based microwave dielectric ceramic material can be obtained.

[0037] The performance of this group of ceramic materials reaches the following indicators:

[0038] Dielectric constant temperature coefficient α ε =0~200ppm / ℃ (at 1MHz), dielectric constant ε=47.5 (at 1MHz), dielectric loss tanδ=2×10 -3 (under 1MHz), dielectric...

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PUM

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Abstract

The invention discloses a low temperature sintering bismuth based microwave medium ceramic material. The expression of the material is Bi(Nb1-xVx)O4, of which 0.001<=x<=0.064. Traditional solid phase synthesis compounding technology is adopted, and the sintering temperature range is between 810 degree centigrade and 980 degree centigrade. The material has low sintering temperature, suitable dielectric constant, and simple manufacturing structure. It could be used to make LTCC, multilayer medium resonator, microwave antenna, filter, etc.

Description

technical field [0001] The invention belongs to the field of electronic ceramics and its manufacture, in particular to a bismuth-based microwave dielectric ceramic material sintered at low temperature and its preparation. Background technique [0002] With the development of mobile communication, portability requirements are put forward for the communication equipment system, and the whole system is moving towards integration, in order to obtain products with small size, light weight, high reliability and low cost. In the process of microwave circuit integration, the emergence of metal waveguides and microwave tubes has enabled microwave circuits to be integrated and miniaturized to a certain extent, but the bulky and bulky metal resonators traditionally used have made it difficult to integrate microstrip circuits. Ceramics (microwave dielectric ceramics, MWDC) make resonators but provide a way out for this. Microwave dielectric ceramics have a high die...

Claims

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Application Information

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IPC IPC(8): C04B35/495C04B35/622C04B35/64H01B3/12
Inventor 汪宏周迪张磊姚熹
Owner XI AN JIAOTONG UNIV
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