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Low-temperature polysilicon thin film transistor and method for manufacturing its channel layer

A technology of thin-film transistors and low-temperature polysilicon, which is applied in transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as the inability to reduce the man-hours for forming polysilicon thin films, high overall transistor costs, and expensive equipment, etc., to improve work efficiency, Effect of low leakage current and improved mobility

Inactive Publication Date: 2006-01-18
AU OPTRONICS CORP
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  • Claims
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Problems solved by technology

[0010] However, because the equipment used in the SLS process is more expensive, and it uses one more special mask than the traditional ELA process, the overall transistor manufacturing cost is quite high
In addition, the SLS process still cannot reduce the man-hours required to form polysilicon thin films

Method used

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  • Low-temperature polysilicon thin film transistor and method for manufacturing its channel layer
  • Low-temperature polysilicon thin film transistor and method for manufacturing its channel layer
  • Low-temperature polysilicon thin film transistor and method for manufacturing its channel layer

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Embodiment Construction

[0031] In the present invention, before the process of converting the amorphous silicon film into a polysilicon film, the sacrificial layer under the area of ​​the amorphous silicon film intended to be used as a polysilicon channel in the subsequent process is removed to form a gap region with lower thermal conductivity than the two sides. So that the crystallization rate of the silicon grains above here is slower than that of the silicon grains in the regions on both sides, so that the grains grow laterally from the two sides to the center, and grow into larger-sized crystals in the channel region. grain. The following examples are used to illustrate the principles of the present invention, so that those skilled in the art can better understand the present invention, but are not intended to limit the present invention.

[0032] image 3 Shown is a schematic cross-sectional view of a low temperature polysilicon thin film transistor according to a preferred embodiment of the p...

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Abstract

This invention relates to a polysilicon film transistor at low temperature, mainly composed of top cover layer, polysilicon and lock end, wherein, the top cover layer is located on the base plate, and leaves a space away from the base plate, the polysilicon is located on the top cover layer and separated into channel region on top of the space and drain region on the two sides of the channel region, and the lock end is located on the channel region. The silicon atom needs longer recrystallization time, which can reduce the grain boundary plane in the channel region and improve the transistor working efficiency.

Description

technical field [0001] The present invention relates to a manufacturing method of a thin film transistor and a channel layer thereof, and in particular to a manufacturing method of a low temperature polysilicon thin film (low temperature poly-silicon, LTPS for short) transistor and a channel layer thereof. Background technique [0002] In general components, switches are required to drive the operation of the components. Taking an actively driven display device as an example, it usually uses a thin film transistor (Thin Film Transistor, TFT) as a driving switch. According to the material of the channel region, thin film transistors can be divided into amorphous silicon (a-Si) thin film transistors and polysilicon (poly-silicon) thin film transistors. Compared with amorphous silicon thin film transistors, polysilicon thin film transistors consume more power. Small and high electron mobility, so it is gradually valued by the market. [0003] The process temperature of the ea...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L21/336
Inventor 郭政彰
Owner AU OPTRONICS CORP
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