Integrated circuit and method of manufacturing same

A technology of integrated circuits and electronic devices, applied in the field of integrated circuits, can solve problems such as generating ID codes, and achieve the effect of reducing the chance of arbitrary changes

Inactive Publication Date: 2005-09-28
NXP BV
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] A disadvantage of known ICs is that it is more difficult to generate ID codes from measurements of parameter values ​​that are a function of random parameter variations in the ID unit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integrated circuit and method of manufacturing same
  • Integrated circuit and method of manufacturing same
  • Integrated circuit and method of manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] figure 1 The IC1 shown in is provided with a set of cells 10 comprising a first subset 12 of ID cells 13 . exist figure 1 In the embodiment of the present invention, the ID cells 13 form a 6X4 rectangular cell array, but the present invention is not limited to ICs having arrays of this size or shape. ID unit 13 is connected to column line 16 , row line 17 and output line 18 . IC1 is also provided with a second subgroup of units 14 comprising access control units 11 for actuating individual ID units 13 .

[0051] In one embodiment shown in FIG. 2, each ID unit 13 includes an electronic device 20, which is a P-channel MOSFET 22, such as image 3 shown in . MOSFET 22 includes a source 23 , a drain 24 , a gate 25 , and a channel 26 between source 23 , drain 24 and gate 25 . Channel 26 is electrically insulated from gate 25 by oxide 27 . The access control unit 11 , eg the same as those in the drive circuit shown in FIG. 11 of US-6,161,213 , comprises a MOSFET 22 a of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The integrated circuit (1) according to the invention comprises a set of cells (10), each of the cells (11, 13, 15, 19) comprises an electrical device (20) with a device parameter whose parameter value is a function of random parametric variations. The set of cells (10) comprises a first subset (12) of identification cells (13) with first random parametric variations, and a second subset (14) of cells (11, 15,19), which are able to generate an identification code by measuring the random differences between the parameter values of the identification cells (13). According to the invention the cells (11, 15, 19) of the second subset (14) have second random parametric variations, which are smaller than the first random parametric variations, thereby making the generation of the identification code relatively easy.

Description

technical field [0001] The present invention relates to an integrated circuit (IC) comprising a group of cells, each cell comprising an electronic device having a device parameter whose value is a function of random parameter variation, the group of cells comprising a first subset of identification (ID) cells and elements for generating a second subset of ID codes by measuring parameter values ​​of the ID elements. [0002] The invention also relates to a method for manufacturing such an IC comprising a substrate and a set of cells, each cell comprising an electronic device having a device parameter whose value is a function of random parameter variation, the substrate comprising a first part and In the second part, the method includes the step of generating random parameter variations. Background technique [0003] US-6,161,213 discloses an example of an IC as described in the opening paragraph. The IC includes an array of ID cells of the same design, each of which is a t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L23/544H01L23/58
CPCH01L2924/0002H01L23/57H01L23/544H01L2223/5444H01L2924/00H01L23/58
Inventor A·C·L·希斯塞斯
Owner NXP BV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap