Integrated self-biased pMOS low turn-off loss SJ-LIGBT device

Abstract

The invention relates to an integrated self-biased pMOS low-turn-off loss SJ-LIGBT device, and belongs to the technical field of semiconductors. According to the invention, (1) the self-biased pMOS comprises a P + drain electrode, an N-type region, a P + source electrode, a metal gate and a trench gate which are in short circuit, and extra gate signal control is not needed; and the source electrode of the pMOS is in short circuit with the drift region of the LIGBT. (3) during forward conduction, the gate-source voltage VGS, P of the pMOS changes along with the collector voltage, and when VGS, Pgt; when VGS, Plt, VGS, VTH, the self-bias pMOS is automatically turned off, and when VGS, Plt; the VTH and the self-biased pMOS are automatically started, holes are extracted through the pMOS, the saturation current density of the device is reduced, and the short-circuit safe working characteristic of the device is enhanced; at the turn-off moment, the device meets VGS and Plt; the VTH and the pMOS are automatically started, holes can be extracted through the pMOS, and turn-off loss is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and relates to an SJ-LIGBT device integrating self-biased pMOS and low turn-off loss. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is a bipolar semiconductor power device that combines MOSFET and BJT tube. It has the advantages of reduced conduction voltage, low driving power consumption and high operating frequency, and is widely used. Used in communication technology, new energy equipment and various consumer electronics fields, it is the core device of electronic power system. Among them, LIGBT (Lateral Insulated Gate Bipolar Transistor, Lateral Insulated Gate Bipolar Transistor) is easy to integrate on Si base, and is usually used in SOI-based power intelligent systems, and is a typical representative of bipolar semiconductor devices. [0003] However, since the LIGBT does not have reverse conduction capability, it is usually...

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Problems solved by technology

[0004] The traditional LIGBT still has some shortcomings that cannot be ignored in use: for example, in the turn-off phase, there are a large number of carriers in the drift region that need to be extracted. There is no additional carrier extraction channel, and the carriers can only pass through recombination. Disappeared, resulting in a longer turn-off time and tail current, affecting the use of the device

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