Low-pressure metal organic chemical vapour phase depositing apparatus for zinc oxide and process thereof

Abstract

The invention was about low voltage metal organic chemistry vapour deposition equipment and the preparation. The system was made up of gas transport system, reaction chamber, sample pretreatment chamber, control system, tail gas treatment system. The sample pretreatment chamber was made up of ectotheca, sample pallet shelf, sample desk, gas bleed spore, plasma generator, flange, plate valve of switch between the sample pretreatment chamber and reaction chamber, flange of plate valve, magnetic transmit bar, magnetic cannula, flange of transmit bar. Its advantages include increased the growing of ZnO film and uniformity, benefit for the P type and intermingle of high impedance.

Description

technical field [0001] The invention relates to equipment for growing ZnO thin film materials of wide bandgap semiconductors and a growth process thereof, in particular to a metal organic compound vapor deposition (MOCVD) equipment working under low pressure conditions and a process method for growing ZnO thin film materials using the equipment. Background technique [0002] Zinc oxide (ZnO) material is another important wide-bandgap semiconductor material that has been hotly researched in the world's optoelectronic field after gallium nitride (GaN). characteristic. ZnO also has higher melting point and exciton binding energy, higher exciton gain, lower temperature required for epitaxial growth, lower cost, easy etching and more convenient subsequent processing technology, etc., which are superior to GaN. It has greater development potential than GaN. There are many methods for the growth of ZnO thin film materials, such as evaporation, magnetron sputtering, ion beam sputt...

AI Technical Summary

Problems solved by technology

[0004] 1. Due to Zn(C 2 h 5 ) 2 and [Zn(CH 3 ) 2 ] both with O 2 Gas phase reaction is very easy to occur. If these two sources are simultaneously introduced into the reaction chamber through the main source gas path (11) or the auxiliary gas path (12), (13), they will meet in the space of the reaction chamber before reaching the substrate, and a gas phase reaction will occur. Reaction, thereby growing into ZnO particles, deposited on the substrate, making the growth quality of ZnO film worse;

[0005] 2. Oxygen vacancies and interstitial zinc atoms exist in ZnO films that are usually grown due to the deviation from the stoichiometric ratio, making the material n-type, so it is extremely difficult to achieve p-type or high-resistance doping of ZnO materials;

[0008] 5. The sample directly enters the reaction chamber, and the substrate, sample and reaction chamber are susceptible to air pollution

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