Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low temperature sintered microwave dielectric ceramic with high dielectric constant and its prepn process

A technology of microwave dielectric ceramics and high dielectric constant, applied in the field of material science, can solve the problems of high temperature coefficient of frequency, low quality factor, hindering the development of multilayer microwave devices, etc., achieve good co-firing matching, promote development process, improve Effect of slurry properties

Inactive Publication Date: 2005-04-27
ZHEJIANG UNIV +1
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the sintering temperature of some materials is lowered to below 900°C, there are few practical low-temperature sintered microwave dielectric ceramic materials due to the large temperature coefficient of frequency, low quality factor, and interface reaction with silver electrodes, which hinders many Development of Layered Microwave Devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention will be further described below in conjunction with embodiment.

[0021] serial number

Component

Basic raw materials a, b (according to the amount of substance)

Sintering aid (by weight percent wt%)

composition

a

b

V 2 o 5 (c)

ZBS glass (d)

1

0.15

0.075

2

0

2

0.15

0.075

1

0

3

0.15

0.1

1

2

4

0.15

0.1

1

5

[0022] In the formula shown in Table 1, high-purity raw materials are required.

[0023] 1. According to the formula above, weigh LiCO 3 , Nb 2 o 5 、TiO 2 , according to the weight ratio of the mixture to ethanol is 1:1.5, add ethanol, mix at a rolling mill at a speed of 300r / min for 24h, dry it, put it into a corundum crucible, and calcinate at 850°C for 4h, and add 2wt% V to the calcined material 2 o 5 , acco...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to low temperature sintered microwave dielectric ceramic with high dielectric constant and its preparation process. The preparation process includes mixing material including Li2CO3, Nb2O5 and alcohol, stoving, calcining, adding V2O5 and self-made ZnO-B2O3-SiO2 glass, mixing, drying, pressing into disc and sintering. The present invention features the sintering temperature lowered through the synergistic effect of V2O5 and ZnO-B2O3-SiO2 glass, regulated temperature coefficient of material frequency, improved powder and slurry characteristic, excellent co-sintering matching property with silver electrode, good microwave dielectric performance obtained through sintering at about 900 deg.c and stable technological process. The low temperature sintered microwave dielectric ceramic material may be used in various kinds of microwave devices.

Description

technical field [0001] The invention relates to a low-temperature sintered microwave dielectric ceramic with high dielectric constant and a preparation method thereof, belonging to the technical field of material science. Background technique [0002] After more than 30 years, modern mobile communication has become increasingly popular all over the world, and is developing in the direction of miniaturization, high frequency, integration, high reliability and low cost. In order to meet the needs of portability and miniaturization of mobile communication terminals, the initial effort was to reduce the size of the resonant circuit. Searching for high dielectric constant microwave dielectric materials is a research hotspot, but the degree of miniaturization is limited. Advanced multilayer integrated circuit technology (MLIC) has made the miniaturization of devices develop rapidly. At present, companies such as TDK and MURATA use stacked co-firing technology to integrate several...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C04B35/462C04B35/622C04B35/64H01B3/12
Inventor 杨辉张启龙王家邦刘兴元黄伟尤源
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products