Method for remaking etching suspension layer
An etching method and etching technology, applied in optics, instruments, electrical components, etc., can solve the problems of incomplete amorphous silicon channel layer, great influence on TFT process and finished product qualification rate, over-etching of the second silicon nitride layer 110, etc.
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[0033] In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and understandable, a preferred embodiment is specifically cited below, together with the accompanying drawings, and the detailed description is as follows:
[0034] The present invention provides a method for reworking an etching-stop layer, which is used on a semiconductor structure. The semiconductor structure includes a substrate, a gate, a gate insulating layer, and an amorphous silicon (amorphous silicon, α-Si) layer, an incomplete etch stop layer and a first patterned photoresist layer. Wherein, the gate is formed on the substrate, the gate insulating layer is formed on the substrate, and the gate insulating layer covers the gate. The amorphous silicon layer is formed on the grid insulating layer, the incomplete etch stop layer is formed on the amorphous silicon layer, and the first patterned photoresist layer is formed on the incomplete etch stop layer. ...
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