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Method for preparing zinc oxide nanometer material with orientation arrangement nano-tubes

A zinc oxide nanometer and directional arrangement technology is applied in the field of preparation of zinc oxide nanomaterials, which can solve the problems of unfavorable cost and efficiency, influence, random dispersion, etc., and achieve the effects of low cost, high efficiency and good uniformity.

Inactive Publication Date: 2004-12-29
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these two methods require extremely harsh conditions such as high temperature, high pressure or high vacuum, which have a very negative impact on the cost and efficiency of material preparation, so they need to be improved or replaced.
Another shortcoming is that the zinc oxide nanotube materials prepared at present are powdery and randomly dispersed, so there is still a certain distance for the application of nano-devices.

Method used

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  • Method for preparing zinc oxide nanometer material with orientation arrangement nano-tubes
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  • Method for preparing zinc oxide nanometer material with orientation arrangement nano-tubes

Examples

Experimental program
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Effect test

Embodiment 1

[0019] ①In a 100mL tetrafluoroethylene plastic bottle, dissolve 0.01mol zinc nitrate, 0.01mol thiourea, and 0.002mol ammonium chloride in 95mL deionized water, stir until completely dissolved, then add 5ml of 25% ammonia water, while adding Stirring is continued, and after the solution is clarified, a reaction solution for growing a zinc oxide film is prepared.

[0020] ②Immerse a quartz plate with a length of 50mm and a width of 20mm into boiling concentrated sulfuric acid, soak it for 10 hours, then immerse it in acetone solution, ultrasonicate it for 30 minutes, rinse it with a large amount of deionized water, and finally put it in a vacuum oven to dry.

[0021] ③Immerse the quartz substrate treated according to step ② into the reaction solution prepared according to ①, ultrasonically for 35 minutes, then place the reaction bottle in an oil bath, and raise the reaction temperature to 95°C at a speed of 10°C / min , keep for 45 minutes. The quartz substrate is then immersed i...

Embodiment 2

[0024] ①In a 100mL tetrafluoroethylene plastic bottle, dissolve 0.01mol zinc nitrate, 0.01mol thiourea, and 0.002mol ammonium chloride in 95mL deionized water, stir until completely dissolved, then add 5ml of 25% ammonia water, while adding Stirring is continued, and after the solution is clarified, a reaction solution for growing a zinc oxide film is prepared.

[0025] ②Immerse a glass piece with a length of 50mm and a width of 20mm into boiling concentrated sulfuric acid, soak it for 10 hours, then immerse it in acetone solution, ultrasonicate it for 60 minutes, rinse it with a large amount of deionized water, and finally put it in a vacuum oven to dry.

[0026] ③Immerse the glass substrate treated according to step ② into the reaction solution prepared according to ①, ultrasonicate for 40 minutes, then place the reaction bottle in an oil bath, and raise the reaction temperature to 97°C at a speed of 20°C / min , keep for 50 minutes. The glass substrate is then cooled by imme...

Embodiment 3

[0028] ①In a 100mL tetrafluoroethylene plastic bottle, dissolve 0.01mol zinc nitrate, 0.01mol thiourea, and 0.002mol ammonium chloride in 95mL of deionized water, stir until completely dissolved, then add 5ml of 25% ammonia water, while adding Stirring is continued, and after the solution is clarified, it is prepared as a reaction solution for growing zinc oxide nanomaterials with aligned nanotubes.

[0029] ②Immerse a quartz plate with a length of 50mm and a width of 20mm into boiling concentrated sulfuric acid, soak it for 8 hours, then immerse it in acetone solution, ultrasonicate it for 45 minutes, rinse it with a large amount of deionized water, and finally put it in a vacuum oven to dry.

[0030] ③Immerse the quartz substrate treated according to step ② into the reaction solution prepared according to ①, ultrasonicate for 38 minutes, then place the reaction bottle in an oil bath, and raise the reaction temperature to 94°C at a speed of 15°C / min , keep for 60 minutes. Th...

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Abstract

The preparation process of nanotube oriented nano zinc oxide material includes dissolving zinc salt, ammonia water, thiourea and ammonium salt in certain proportion in deionized water to prepare film growing reaction solution; and soaking processed substrate inside the reaction solution, ultrasonic treatment for 35-40 min, heating to 94-97 deg.c to reaction for 45-60 min to obtain compact nanotube oriented nano zinc oxide material. The said process of the present invention is simple, low in cost and short in production period, and the prepared nano zinc oxide material consists of oriented nanotube of average diameter of 500 nm, thickness of 100 nm and length of 6 micron.

Description

technical field [0001] The invention relates to a preparation method of a zinc oxide nanometer material, in particular to a preparation method of a zinc oxide nanometer material with oriented arrangement of nanotubes. The zinc oxide nanomaterial with oriented arrangement of nanotubes is prepared by a chemical solution growth method. Background technique [0002] The structure and morphology of nanomaterials have a great influence on the performance and application of nanomaterials. The preparation of nanocrystalline materials with specific structures and morphologies is of great significance for the development of new fields of nanomaterial functions. Among the numerous shapes of nanomaterials (nanospheres, nanorods, nanowires, nanobelts, nanofibers, and nanotubes), nanotubes have become the focus of research because of their unique structures. Since the advent of carbon nanotubes in 1991, a large number of simple substances (silicon, germanium, copper, antimony, etc.) and c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02
Inventor 王卓钱雪峰
Owner SHANGHAI JIAO TONG UNIV
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