Mfg. method of semiconductor device with opening portion

Abstract

When an antireflection film is used when forming the two-stage stepped opening on the interlayer insulating film, it is possible to obtain a semiconductor device manufacturing method capable of preventing a decrease in reliability. The manufacturing method of this semiconductor device comprises the steps of forming a first resist pattern on a predetermined region on an antireflective film, using the first resist pattern as a mask to form a first opening in an interlayer insulating film, leaving After removing the first anti-corrosion pattern on the anti-reflection film, in the predetermined area on the anti-reflection film, the process of forming the second anti-corrosion pattern, using the second anti-corrosion pattern as a mask, at least on the top of the first opening, A step of forming a second opening having a larger opening area than the first opening.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device having an opening. Background technique [0002] In recent years, attempts have been made to simplify the process by using a dual damascene (Dual Damascene) method when forming multilayer wiring of a semiconductor device. This double embedding method is: After forming a via hole and a wiring trench on the interlayer insulating film, by embedding metal in the via hole and wiring trench, simultaneously forming the embedded wiring that becomes the upper wiring layer In this dual damascene method, as a process of forming a via hole and a wiring trench, a plug is obtained to obtain a contact with the underlying wiring layer. After the via hole is formed in the insulating film, the upper portion of the via hole is opened again to form a trench for embedded wiring. [0003] Usually, the aforementioned v...

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Problems solved by technology

[0012] Then, if such a wall-shaped residue is formed, it is difficult to fill the via hole 111 and the wiring trench 112 with wiring metal, and as a result, it may be difficult to perform wiring in the via hole 111 and the wiring trench 112. question

Also, even if it is possible to form wiring such as Figure 41 As shown, problems such as disconnection after the formation of the diffusion prevention film 134 and the wiring 135 also occur.

For this reason, there is a problem of lowering the reliability of the semiconductor device.

[0013] In addition, not limited to the above examples, there is also a problem in that the reliability of the semiconductor device is reduced due to the residue of the antireflection film in the method of forming the two-stage stepped opening on the interlayer insulating film with the antireflection film.

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