Damascene process for chemically vapor depositing titanium nitride and copper metal layer

Abstract

The present invention relates to Damascene process of chemically vapor depositing TiN layer and Cu metal layer. Inside one multiple-cavity vacuum equipment, TiN diffusing barrier layer and Cu metal film are first deposited successively and then heat annealed quickly in H2-N2 atmosphere to obtain TiSiN barrier layer and Cu metal film with homogeneously distributed crystal size and resistance. The present invention has excellent filling property and form retention, good adhesion to insulating medium and stable and simple technological process. When combined with chemical and mechanical polishing of Cu, may be manufactured Cu metal Damascene interconnection wiring structure suitable for deep submicron superlarge scale ICs.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuit manufacturing technology, and specifically relates to the use of chemical vapor deposition (CVD) TiSiN barrier layer and Cu metal film, and in N 2 and H 2 In the atmosphere, the CVD deposited Cu metal film is annealed, combined with the Cu chemical mechanical polishing (CMP) process, to realize the Cu damascene interconnection structure. Background technique [0002] With the continuous reduction of integrated circuit design rules, the line width of the feature size has been reduced to 0.10 microns, and the trend of continuous downward reduction is maintained. On the other hand, the density of devices in integrated circuits continues to increase, the number of metal wiring layers is increasing, and the number of wiring layers in logic circuits has reached 7-8 layers. Due to the increase of the resistance of the metal interconnection line itself and its parasitic capacita...

AI Technical Summary

Problems solved by technology

The usual method of depositing Cu thin films is to use Cu-containing organics, such as (CF 3 COCHCF 3 CO) 2 Cu, with H 2 Or Ar gas is carried into the CVD system, although (CF 3 COCHCF 3 CO) 2 Cu can be directly decomposed to form Cu, but the deposition rate is very low and the quality is poor. After entering H2, the deposition rate can be significantly increased and a better quality Cu film can be obtained.