Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Substrate and method for manufacturing substrate

A manufacturing method and substrate technology, applied in the direction of multi-layer circuit manufacturing, etc., can solve problems such as malfunction, and achieve the effects of increasing the contact area, ensuring integrity, and ensuring conductivity.

Inactive Publication Date: 2018-07-31
MEIKO ELECTRONICS CO LTD
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, semiconductors using Si will cause malfunctions and failures when the ambient temperature becomes 100°C or higher.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate and method for manufacturing substrate
  • Substrate and method for manufacturing substrate
  • Substrate and method for manufacturing substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] Such as figure 1 and figure 2 As shown, the substrate 1 of the present invention is mainly constituted by a laminated wiring board 3 called a multilayer board (including double-sided boards) on which a plurality of conductive layers 2 are formed. exist figure 1 In the example of , a so-called four-layer board formed with four conductive layers 2 is shown. The conductive layer 2 is formed on each layer as a conductive pattern. An insulating layer 4 is disposed between the conductive layers 2 . The insulating layer 4 is formed of insulating materials such as prepreg, for example. More specifically, for the insulating layer 4 , for example, a prepreg in which a sheet-shaped glass cloth 5 woven with glass fiber yarns is used is used in an epoxy resin.

[0031] Through holes 6 are formed in the laminated wiring board 3 . The through hole 6 penetrates the laminated wiring board 3 . The hole shape of the through hole 6 is substantially cylindrical. In a plan view of t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A substrate of the present invention is provided with: a laminated wiring board wherein a conductive layer is formed; a through hole penetrating the laminated wiring board; a through hole plating (7)electrically connected to the conductive layer; and a metal piece (10) disposed on the inner side of the through hole plating (7). In the side surface of the metal piece (10), a protruding section (8)directly in contact with the through hole plating (7), and a separated section (9) at a position separated from the through hole plating (7) are formed, and a space surrounded by the separated section (9) and the through hole plating (7) is covered with a metal plating film (13), and the inside of the plating film (13) is filled with a filling material (14).

Description

technical field [0001] The present invention relates to a substrate and a method for manufacturing the substrate. The substrate is a substrate such as a printed wiring board, in which a metal sheet is embedded, and has excellent large current characteristics and heat dissipation characteristics. Background technique [0002] Semiconductor elements in circuits tend to generate more heat due to higher densities and higher currents. In particular, semiconductors using Si cause malfunctions and failures when the ambient temperature becomes 100° C. or higher. As heat generating components such as such semiconductor elements, there are switching elements such as IGBT (Insulated Gate Bipolar Transistor) and IPM (Intelligent Power Module), for example. [0003] In order to effectively cool the heat-generating component, the heat-dissipating path is formed so that the heat generated from the heat-generating component dissipates toward the opposite side of the substrate. Specificall...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H05K3/46
CPCH05K3/46
Inventor 高林纯平关保明牧野直之
Owner MEIKO ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com